Jan 28, 2021
Accumulated Charge Measurement: Control of the Interfacial Depletion Layer by Offset Voltage and Estimation of Band Gap and Electron Injection Barrier
The Journal of Physical Chemistry C
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- Volume
- 125
- Number
- 3
- First page
- 1990
- Last page
- 1998
- Language
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1021/acs.jpcc.0c04974
- Publisher
- American Chemical Society (ACS)
This study investigates the charge injection barrier at the phthalocyanine (H2Pc)/Pd using accumulated charge measurement (ACM). Because the hole injection barrier is relatively small, the voltage oscillation method in ACM is achieved at the highest occupied molecular orbital/Pd interface, and the hole injection barrier was determined to be 0.26 eV. A negative offset voltage was applied to determine the electron injection barrier at the lowest unoccupied molecular orbital (LUMO)/Pd interface. However, when the electron injection barrier was significantly large, the charge-injected thermal equilibrium state (CITES) could not be achieved at the interface, and an accurate injection barrier could not be determined. Surprisingly, by applying a positive offset voltage, a CITES of electrons was obtained at the LUMO/Pd interface, and the band gap was determined to be 2.75 eV. Furthermore, the electron injection barrier was found to be 2.49 eV. By applying a positive offset voltage, band bending occurred at the H2Pc/Pd interface, thereby reducing the depletion layer in the LUMO and enabling the determination of the band gap and electron injection barrier.
- Link information
- ID information
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- DOI : 10.1021/acs.jpcc.0c04974
- ISSN : 1932-7447
- eISSN : 1932-7455
- SCOPUS ID : 85099993894