2014年5月
Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation
JOURNAL OF APPLIED PHYSICS
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 115
- 号
- 17
- 開始ページ
- 17B907
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 速報,短報,研究ノート等(学術雑誌)
- DOI
- 10.1063/1.4868704
- 出版者・発行元
- AMER INST PHYSICS
As a first step toward the development of bit-patterned magnetic media made of oxides, we investigated the effectiveness of magnetism control by Kr implantation in a typical spinel ferromagnetic oxide, Fe3O4. We implanted Kr ions accelerated at 30 kV on 13-nm-thick Fe3O4 thin films at dosages of (1-40) x 10(14) ions/cm(2). Magnetization decreased with increase in ion dosages and disappeared when irradiation was greater than 2 x 10(15) ions/cm(2) of Kr ions. These dosages are more than ten times smaller than that used in the N-2 implantation for metallic and oxide ferromagnets. Both the temperature dependence of magnetization and the Mossbauer study suggest that the transition of Fe3O4 from ferromagnetic to paramagnetic took place sharply due to Kr ion irradiation, which produces two-phase separation-ferromagnetic and nonmagnetic with insufficient dosage of Kr ions. (C) 2014 AIP Publishing LLC.
- リンク情報
- ID情報
-
- DOI : 10.1063/1.4868704
- ISSN : 0021-8979
- eISSN : 1089-7550
- Web of Science ID : WOS:000335643700290