論文

査読有り
2018年3月21日

Spin-valve giant magneto-resistance film with magnetostrictive FeSiB amorphous layer and its application to strain sensors

Journal of Applied Physics
  • Y. Hashimoto
  • ,
  • N. Yamamoto
  • ,
  • T. Kato
  • ,
  • D. Oshima
  • ,
  • S. Iwata

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記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.5018467
出版者・発行元
American Institute of Physics Inc.

Giant magneto-resistance (GMR) spin-valve films with an FeSiB/CoFeB free layer were fabricated to detect applied strain in a GMR device. The magnetostriction constant of FeSiB was experimentally determined to have 32 ppm, which was one order of magnitude larger than that of CoFeB. In order to detect the strain sensitively and robustly against magnetic field fluctuation, the magnetic field modulation technique was applied to the GMR device. It was confirmed that the output voltage of the GMR device depends on the strain, and the gauge factor K = 46 was obtained by adjusting the applied DC field intensity and direction. We carried out the simulation based on a macro-spin model assuming uniaxial anisotropy, interlayer coupling between the free and pin layers, strain-induced anisotropy, and Zeeman energy, and succeeded in reproducing the experimental results. The simulation predicts that improving the magnetic properties of GMR films, especially reducing interlayer coupling, will be effective for increasing the output, i.e., the gauge factor, of the GMR strain sensors.

リンク情報
DOI
https://doi.org/10.1063/1.5018467
ID情報
  • DOI : 10.1063/1.5018467
  • ISSN : 1089-7550
  • ISSN : 0021-8979
  • SCOPUS ID : 85044260088

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