論文

査読有り
2013年12月

Structure Analyses of Room Temperature Deposited AlOx Passivation Films for Crystalline Silicon Solar Cells

JAPANESE JOURNAL OF APPLIED PHYSICS
  • Chikako Sakai
  • ,
  • Shunsuke Yamamoto
  • ,
  • Ko Urushibata
  • ,
  • Shohei Miki
  • ,
  • Koji Arafune
  • ,
  • Haruhiko Yoshida
  • ,
  • Hyun Ju Lee
  • ,
  • Atsushi Ogura
  • ,
  • Yoshio Ohshita
  • ,
  • Shin-ichi Satoh

52
12
開始ページ
122303-1
終了ページ
122303-5
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.7567/JJAP.52.122303
出版者・発行元
IOP PUBLISHING LTD

We studied the structure of ozone-based atomic layer deposited aluminium oxide (AIO(x)) films as a passivation layer for p-type crystalline silicon (c-Si) solar cells and focused on the differences in the structure by the production conditions of AIO(x) films. Carbon (C)-related groups such as methyl, hydroxyl, and carboxyl groups which originate from the aluminium source, trimethylaluminium, were only found in the AIO(x) film deposited at room temperature (AT-sample). By post-deposition thermal annealing (PDA), the C-related groups were desorbed from the film and a part of their space remained as voids. The C-related groups were not found in the films deposited at 200 or 300 degrees C (heated-samples) since they were desorbed during the deposition. Even though C-related groups did not exist in the both RT- and heated-samples after PDA, the structure of the AIO(x) film of the RT-sample was different from that of the heated-sample. (C) 2013 The Japan Society of Applied Physics

Web of Science ® 被引用回数 : 3

リンク情報
DOI
https://doi.org/10.7567/JJAP.52.122303
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000331427600011&DestApp=WOS_CPL

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