馮ウェイ (Wei Feng) - マイポータル - researchmap

基本情報

所属: 国立研究開発法人産業技術総合研究所エレクトロニクス・製造領域主任研究員

研究者番号: 10713266
ORCID iD: https://orcid.org/0000-0002-9193-978X
J-GLOBAL ID: 202401003263407975
researchmap会員ID: R000074733

論文

34

Effect of TEOS layer on wafer warpage for wafer-to-wafer bonding

Wei Feng

MICROELECTRONICS RELIABILITY 2025年
Heat transfer study of 3D packaging structure with superconducting TSV for practical-scale quantum annealing machines

Wei Feng

JAPANESE JOURNAL OF APPLIED PHYSICS 2024年
Wafer-to-Wafer Bonding Fabrication Process-Induced Wafer Warpage

Wei Feng

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 2023年
Wafer-to-Wafer Bonding Fabrication Process-Induced Wafer Warpage

Wei Feng, Haruo Shimamoto, Tsuyoshi Kawagoe, Ichirou Honma, Masato Yamasaki, Fumitake Okutsu, Takatoshi Masuda, Katsuya Kikuchi

IEEE Transactions on Semiconductor Manufacturing 2023年
Warpage Reduction and Thermal Stress Study of Dicing Process in Wafer-to-Wafer Bonding Fabrication

Wei Feng, Haruo Shimamoto, Tsuyoshi Kawagoe, Ichirou Honma, Masato Yamasaki, Fumitake Okutsu, Takatoshi Masuda, Katsuya Kikuchi

IEEE Transactions on Electron Devices 2022年11月
Warpage Reduction and Thermal Stress Study of Dicing Process in Wafer-to-Wafer Bonding Fabrication

Wei Feng

IEEE TRANSACTIONS ON ELECTRON DEVICES 2022年
Study of wafer warpage reduction by dicing street

Wei Feng

JAPANESE JOURNAL OF APPLIED PHYSICS 2022年
Thermal management of a 3D packaging structure for superconducting quantum annealing machines

Wei Feng, Katsuya Kikuchi, Mutsuo Hidaka, Hirotake Yamamori, Yuuki Araga, Kazumasa Makise, Shiro Kawabata

Applied Physics Letters 118(17) 174004-174004 2021年4月26日
Thermal management of a 3D packaging structure for superconducting quantum annealing machines

Wei Feng

APPLIED PHYSICS LETTERS 2021年
Investigation of Heat Transfer in 3D Packaging for Practical-scale Quantum Annealing Machines

Wei Feng

2021 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2021) 2021年
Material effect on thermal stress of annular-trench-isolated through silicon via (TSV)

Wei Feng

JAPANESE JOURNAL OF APPLIED PHYSICS 2020年
Stress investigation of annular-trench-isolated TSV by polarized Raman spectroscopy measurement and finite element simulation

Wei Feng

MICROELECTRONICS RELIABILITY 2019年
Residual stress investigation of via-last through-silicon via by polarized Raman spectroscopy measurement and finite element simulation

Wei Feng

JAPANESE JOURNAL OF APPLIED PHYSICS 2018年
Low residual stress in Si substrate of annular-trench-isolated TSV

Wei Feng

2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) 2016年
Validation of TSV thermo-mechanical simulation by stress measurement

Wei Feng

MICROELECTRONICS RELIABILITY 2016年
Investigations of electrical transport properties of individual carbon nanotubes with nanoprober

Wei Feng

JAPANESE JOURNAL OF APPLIED PHYSICS 2016年
Fabrication and stress analysis of annular-trench-isolated TSV

Wei Feng

MICROELECTRONICS RELIABILITY 2016年
Investigation of switching mechanism in HfO_x-ReRAM under low power and conventional operation modes

Wei Feng

SCIENTIFIC REPORTS 2016年
Methods to Reduce Thermal Stress for TSV Scaling ∼TSV with Novel Structure: Annular-Trench-Isolated TSV∼

Wei Feng

2015 IEEE 65TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) 2015年
Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

Wei Feng

IEEE ELECTRON DEVICE LETTERS 2014年

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