2012年
High temperature switching operation of a power diamond Schottky barrier diode
IEICE Electronics Express
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- ,
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- 巻
- 9
- 号
- 24
- 開始ページ
- 1835
- 終了ページ
- 1841
- 記述言語
- 英語
- 掲載種別
- 速報,短報,研究ノート等(学術雑誌)
- DOI
- 10.1587/elex.9.1835
Diamond is considered to be the most promising wide band gap semiconductor material for the fabrication of power switching devices with respect to the figure of merit. The authors have developed a high voltage and high current diamond Schottky barrier diode (SBD). This paper evaluates the static and dynamic electrical performance of the developed diamond SBD as a power switching device. The experimental results obtained under different operating conditions validate the fast switching, unipolar device characteristics, and high temperature operation capability of the developed diamond SBD.
- リンク情報
- ID情報
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- DOI : 10.1587/elex.9.1835
- ISSN : 1349-2543
- SCOPUS ID : 84875038307