2006年8月
Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage
IEICE ELECTRONICS EXPRESS
- ,
- ,
- ,
- 巻
- 3
- 号
- 16
- 開始ページ
- 379
- 終了ページ
- 384
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1587/elex.3.379
- 出版者・発行元
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
This paper investigates the punch-through phenomenon in SiC Schottky Barrier Diodes (SBD) from capacitance-voltage (C-V) characteristics at high reverse bias voltage. High voltage bias application has not been possible by conventional measurement instrumentation. The authors, therefore, develop C-V characteristics measurement instrumentation which enables the application of high dc bias voltages on SiC-SBD up to the rated reverse blocking voltage. The measurement is then validated through the comparison of results from different measurement methods. The proposed methods clearly reveal the punch-through phenomenon of measured SiC-SBD, and enable the extraction of pertinent parameters for device modeling.
- リンク情報
- ID情報
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- DOI : 10.1587/elex.3.379
- ISSN : 1349-2543
- Web of Science ID : WOS:000241915200001