Fast switching capability of SiC power devices enables the downsizing of power conversion circuits by high-frequency switching operation. However, high di/dt in fast switching operation for high-frequency switching induces surge voltage. This paper developed low-inductance power module substrate with snubber capacitor directly attached on the substrate to suppress surge voltage in fast switching, and validated the performance of the developed SiC half-bridge power module. The surge voltage was suppressed less than 1/10 of the conventional power module configuration for same switching speed.