2019年9月
Influence of gate drive circuit for power device on EMI noise characteristics in a phase-leg topology
EMC Europe 2019 - 2019 International Symposium on Electromagnetic Compatibility
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- 開始ページ
- 321
- 終了ページ
- 326
- 記述言語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1109/EMCEurope.2019.8871969
© 2019 IEEE. Fast and high-frequency switching operation of wide-bandgap power semiconductor devices such as Silicon carbide (SiC) and Gallium nitride (GaN) could cause severe electromagnetic interference (EMI) noise problem in high and wide frequency range. This report experimentally investigates the dependency of gate drive circuit configuration on EMI noise characteristics of SiC-based half-bridge converter.
- リンク情報
- ID情報
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- DOI : 10.1109/EMCEurope.2019.8871969
- SCOPUS ID : 85074374523