論文

査読有り
2017年11月2日

A study on parasitic inductance reduction design in GaN-based power converter for high-frequency switching operation

2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE 2017, EMC Europe 2017
  • Takaaki Ibuchi
  • ,
  • Tsuyoshi Funaki

記述言語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1109/EMCEurope.2017.8094824

© 2017 IEEE. This report studies the influence of printed circuit board (PCB) design on voltage overshoot and ringing oscillation in switching operation of gallium nitride gate injection transistor (GaN-GIT) for high-frequency DC-DC converter. The parasitic inductances in the main power loop have been identified based on moment of method (MoM) analysis and frequency characteristics of impedance measured with 2-port shunt-thru method. The measured switching characteristics of GaN-GIT in a 5 MHz DC-DC boost converter shows that a small-ESL ceramic capacitor connected across the DC-link can reduce the effective power loop inductances and can improve both voltage overshoot and the damping of ringing oscillation.

リンク情報
DOI
https://doi.org/10.1109/EMCEurope.2017.8094824
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040540873&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85040540873&origin=inward
ID情報
  • DOI : 10.1109/EMCEurope.2017.8094824
  • SCOPUS ID : 85040540873

エクスポート
BibTeX RIS