2010年7月
Characterization of SiC power module for high switching frequency operation
IEICE ELECTRONICS EXPRESS
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- ,
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- 巻
- 7
- 号
- 14
- 開始ページ
- 1008
- 終了ページ
- 1013
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1587/elex.7.1008
- 出版者・発行元
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
The authors developed SiC power module with large rated current by connecting multiple SiC MOSFETs in parallel. This paper characterizes and evaluates its high switching frequency operation performance by comparing it with the conventional Si IGBT module. First, the static current-voltage characteristics and terminal capacitance-voltage characteristics are evaluated. Then, the switching behavior of the SiC power module is experimentally evaluated in the DC-DC boost converter circuit. The results clarified the superiority of the developed SiC power module for fast switching capability and low switching loss.
- リンク情報
- ID情報
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- DOI : 10.1587/elex.7.1008
- ISSN : 1349-2543
- Web of Science ID : WOS:000281829000008