2020年12月1日
EMI noise source characterization for SiC and GaN power transistors in synchronous rectification DC-DC converter
IEEJ Transactions on Fundamentals and Materials
- ,
- 巻
- 140
- 号
- 12
- 開始ページ
- 565
- 終了ページ
- 572
- 記述言語
- 日本語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1541/ieejfms.140.565
© 2020 The Institute of Electrical Engineers of Japan. Fast switching operation of Silicon carbide (SiC) and Gallium nitride (GaN) power semiconductor devices could be a severe electromagnetic interference (EMI) noise source of high-voltage power converter. This paper experimentally evaluates the dynamic characteristics of SiC and GaN power transistor in synchronous rectification DC-DC converter and characterized it as an EMI noise source. The results suggest that the characteristics of unipolar device of SiC MOSFET (metal-oxide-semiconductor field-effect transistor) and GaN HEMT (high-electron-mobility transistor) show large-amplitude and slow-damped ringing oscillation in the switching waveform. It will influence on the EMI level of power converter in several tens of megahertz range.
- リンク情報
- ID情報
-
- DOI : 10.1541/ieejfms.140.565
- ISSN : 0385-4205
- eISSN : 1347-5533
- SCOPUS ID : 85097251993