© 2020 IEEE. The fast switching characteristics of silicon carbide (SiC) power devices can be expected to realize low losses, light weight, and compact power converters. However, high dv/dt and di/dt during switching transients raise the concerns of electromagnetic interference (EMI) for high-power converters. This report focuses on the switching characteristics of SiC power devices, and discusses the relationship between their transient characteristics and EMI noise sources for power conversion circuit.