岩田 栄之

Numerical analysis of alpha-particle induced soft-errors in SOI/MOS devices 

Conference on Solid State Devices and Materials 465-467 1991年  査読有り筆頭著者

Two-dimensional current/voltage measurements of reverse-biased n⁺-diodes by photoemission 

Proceedings of 1992 International Conference on Microelectronic Test Structures, San Diego 34-38 1992年  査読有り

Three-dimensional effects of latchup turn-on CMOS and forward-biased n⁺-diode measured by photoemission 

Proceedings of 1992 International Conference on Microelectronic Test Structures, San Diego 115-120 1992年  査読有り

A two-dimensional analysis of hot-carrier photoemission from LOCOS- and trench-isolated MOSFETs 

Technical Digest - International Electron Devices Meeting, IEDM 1992-December 527-530 1992年  査読有り

Numerical Analysis of Alpha-Particle-Induced Soft Errors in SOI MOS Devices 

IEEE Transactions on Electron Devices 39(5) 1184-1190 1992年5月  査読有り筆頭著者

Transient Latchup Characteristics in n-Well CMOS 

IEEE Transactions on Electron Devices 39(8) 1870-1875 1992年8月  査読有り

Channel-width measurements of LOCOS- and trench-isolated n-MOSFETs by photoemission 

IEEE International Conference on Microelectronic Test Structures 269-274 1993年  査読有り

Photoemission characteristics of reverse-breakdown n⁺-diodes with LOCOS- and trench-isolation 

IEEE International Conference on Microelectronic Test Structures 177-182 1993年  査読有り

Two-dimensional analysis of hot-carrier photoemission from LOCOS- and trench-isolated MOSFETs 

IEICE Transactions on Electronics E76-C(11) 1673-1682 1993年11月  査読有り

Numerical analysis of silicon-on-insulator thin-film solar cells 

Conference Record of the IEEE Photovoltaic Specialists Conference 2 1437-1440 1994年  査読有り筆頭著者

Photon-energy distribution of hot-carrier photoemission from LOCOS and trench-isolated MOSFETs 

Solid State Electronics 37(7) 1421-1428 1994年7月  査読有り

Channel-Width Measurements of LOCOS- and Trench-Isolated MOSFET’s by Photoemission 

IEEE Transactions on Semiconductor Manufacturing 7(3) 259-265 1994年8月  査読有り

Nonuniform Reverse-Breakdown Characteristics of n+-Diodes Fabricated by LOCOS and Trench Isolation 

IEEE Transactions on Electron Devices 41(12) 2477-2480 1994年12月  査読有り

Numerical Simulation of Single Event Latchup in the Temperature Range of 77-450 K 

IEEE Transactions on Nuclear Science 42(3) 148-154 1995年6月  査読有り筆頭著者

Numerical simulation of silicon-on-insulator thin-film solar cells 

Japanese Journal of Applied Physics 34(8 R) 4055-4061 1995年8月  査読有り筆頭著者

Transport equations for homogeneous and variable-composition semiconductor devices at low temperatures 

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35(4 A) 2112-2113 1996年4月  査読有り筆頭著者

低温における不均一半導体デバイス解析のための輸送方程式の導出 

日本応用数理学会論文誌 7(1) 27-36 1997年  査読有り筆頭著者