YAO Yongzhao

J-GLOBAL         Last updated: Oct 25, 2018 at 17:10
 
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Name
YAO Yongzhao
E-mail
y_yaojfcc.or.jp
Affiliation
Japan Fine Ceramics Center
Research funding number
80523935

Research Areas

 
 

Academic & Professional Experience

 
Jun 2009
 - 
Today
Japan Fine Ceramics Center
 
Jan 2008
 - 
May 2009
Postdoctoral Researcher, National Institute for Materials Science
 
Sep 2004
 - 
Dec 2007
National Institute for Materials Science
 

Education

 
Sep 2004
 - 
Dec 2007
University of Tsukuba
 

Published Papers

 
S. Usami, Y. Ando, A. Tanaka, K. Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, H. Amano, Y. Sugawara, YZ. Yao and Y. Ishikawa
Appl. Phys. Lett.   112 182106   2018   [Refereed]
Y. Ishikawa, M. Sudo, YZ. Yao, Y. Sugawara and M. Kato
J. Appl. Phys.   123 225101   2018   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi, K. Hirano
J. of Electron. Mater.   47 5007-5012   2018   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi, K. Hirano
Mater. Sci. Forum   897 185-188   2017   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, K. Tadatomo
Mater. Sci. Forum   897 707-710   2017   [Refereed]
YZ. Yao, Y. Ishikawa, M. Sudo, Y. Sugawara, D. Yokoe
J. Cryst. Growth   468 484-488   2017   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, T. Shirai, K. Sato, T. Bessho, Y. Takahashi, Y. Yamashita, K. Hirano
Mater. Sci. Forum   858 389-392   2016   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, K. Tadatomo
Superlattices and Microstructures   99 83-87   2016   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, H. Yamada, A. Chayahara, Y.Mokuno
Diamond & Related Materials   63 86-90   2016   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, K. Sato
Mater. Sci. Forum   823 541-544   2015   [Refereed]
Y. Ishikawa, YZ. Yao, Y. Sugawara, K. Sato, Y. Okamoto, N. Hayashi, B. Dierre, K. Watanabe, T. Sekiguchi
Jpn. J. Appl. Phys.   53 71301   2014   [Refereed]
Y. Sugawara, YZ. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi, K. Nishikawa, Y. Ikuhara
Mater. Sci. Forum   778-780 366-369   2014   [Refereed]
Y. Ishikawa, YZ. Yao, K. Sato, Y. Sugawara, Y. Okamoto, N. Hayashi
Mater. Sci. Forum   778-780 362-365   2014   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, T. Shirai, K. Danno, H. Suzuki, H. Sakamoto, T. Bessho, B. Dierre, K. Watanabe, T. Sekiguchi
Jpn. J. Appl. Phys.   53 81301   2014   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, K. Sato
Mater. Sci. Forum   778-780 746-749   2014   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, H. Suzuki, H. Sakamoto, T. Bessho, S. Yamaguchi, K. Nishikawa
Mater. Sci. Forum   778-780 346-349   2014   [Refereed]
YZ. Yao, Y. Ishikawa, K. Sato, Y. Sugawara, K. Danno, H. Suzuki, T. Bessho
Mater. Sci. Forum   740-742 829-832   2013   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi, K. Nishikawa
J. Cryst. Growth   364 7-10   2013   [Refereed]
Y. Sugawara, M. Nakamori, YZ. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi, K. Nishikawa and Y. Ikuhara
Appl. Phys. Express   5 81301   2012   [Refereed]
Y. Sugawara, YZ. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, Y. Kawai and Y. Ikuhara
Mater. Sci. Forum   725 11-14   2012   [Refereed]
Y. Ishikawa, K. Sato, Y. Okamoto, N. Hayashi, YZ. Yao, Y. Sugawara
Mater. Sci. Forum   717-720 383-386   2012   [Refereed]
Y. Ishikawa, YZ. Yao, Y. Sugawara, K. Danno, H. Suzuki, Y. Kawai and N. Shibata
Mater. Sci. Forum   717-720 367-370   2012   [Refereed]
YZ. Yao, T. Sekiguchi, T. Ohgaki, Y. Adachi and N. Ohashi
J. Ceram. Soc. Jpn   120(11) 513-519   2012   [Refereed]
YZ. Yao, K. Sato, Y. Sugawara, Y. Ishikawa, Y. Okamoto and N. Hayashi
Mater. Sci. Forum   725 23-26   2012   [Refereed]
YZ. Yao, Y. Sugawara, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, Y. Kawai and N. Shibata
Mater. Sci. Forum   725 45-48   2012   [Refereed]
YZ. Yao, Y. Ishikawa, K. Sato, Y. Sugawara, K. Danno, H. Suzuki, T. Bessho
Appl. Phys. Express   5 75601   2012   [Refereed]
Y. Ishikawa, YZ. Yao, Y. Sugawara, K. Sato, K. Danno, H. Suzuki, T. Bessho, Y. Kawai and N. Shibata
Acta Phys. Pol. A   120 A25-A27   2011   [Refereed]
YZ. Yao, Y. Sugawara, Y. Ishikawa, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata
J. Appl. Phys.   109 123524   2011   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata
Jpn. J. Appl. Phys.   50 75502   2011   [Refereed]
YZ. Yao, Y. Sugawara, Y. Ishikawa, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata
Mater. Sci. Forum   679-680 294-297   2011   [Refereed]
YZ. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata
Mater. Sci. Forum   679-680 290-293   2011   [Refereed]
YZ. Yao, T. Sekiguchi, T. Ohgaki, Y. Adachi and N. Ohashi
J. Ceram. Soc. Jpn.   118(2) 152-156   2010   [Refereed]
YZ. Yao, T. Ohgaki, N. Fukata, Y. Adachi, Y. Wada, H. Haneda and N. Ohashi
Scripta Mater.   62 516-519   2010
Y. Wang, B. Dierre, T. Sekiguchi, YZ. Yao, X. L. Yuan, F. J. Xu and B. Shen
J. Vac. Sci. Technol. A   27 611-613   2009   [Refereed]
T. Yamada, H. Yamane, YZ. Yao, M. Yokoyama and T. Sekiguchi
Mate. Res. Bull.   44 594-599   2009   [Refereed]
YZ. Yao, T. Sekiguchi, T. Ohgaki, Y. Adachi, N. Ohashi, H. Okuno and M. Takeguchi
Appl. Phys. Lett.   95 41913   2009
YZ. Yao, T. Ohgaki, K. Matsumoto, I. Sakaguchi, Y. Wada, H. Haneda, T. Sekiguchi and N. Ohashi
Phys. Stat. Sol. (c)   6 S707-S710   2009
B. Dierre, X. L. Yuan, YZ. Yao, M. Yokoyama and T. Sekiguchi
J. Mater. Sci.-Mater. El.   19 S307-S310   2008   [Refereed]
YZ. Yao, T. Sekiguchi, N. Ohashi, Y. Adachi and T. Ohgaki
Appl. Phys. Lett.   92 211910   2008
YZ. Yao, T. Sekiguchi, Y. Sakuma, N. Ohashi, Y. Adachi, H. Okuno and M. Takeguchi
Cryst. Growth & Des.   8 1073-1077   2008
T. Yamada, H. Yamane, T. Goto, T. Yao, YZ. Yao and T. Sekiguchi
Cryst. Res. Technol.   42 713-717   2007   [Refereed]
YZ. Yao, T. Sekiguchi, Y. Sakuma and N. Ohashi
J. Cryst. Growth   301-302 521-524   2007
T. Sekiguchi , M.R. Chandra, YZ. Yao, X.L. Yuan, K. Tsuji and J.Y. Kang
Mater. Sci. Semicon. Proc.   9 19-24   2006   [Refereed]
R.F. Yue, YZ. Yao and L.T. Liu
Chin. Phys. Lett.   23 482-485   2006   [Refereed]
YZ. Yao, T. Sekiguchi, Y. Sakuma, M. Miyamura and Y. Arakawa
Scripta Mater.   55 679-682   2006
R. Buckmaster, J.H. Yoo, K. Shin, YZ. Yao, T. Sekiguchi, M. Yokoyama, T. Hanada, T. Goto, M. Cho, Y. Kawazoe and T. Yao
Microelectron J.   36 456-459   2005   [Refereed]

Misc

 
炭化ケイ素ウエハの簡易な欠陥検出法の開発
姚永昭, 石川由加里, 菅原義弘, 斎藤広明, 旦野克典, 鈴木寛, 河合洋一郎
FC Report   31(1) 12-14   2013   [Invited]
低損失・省エネパワーデバイス用SiC結晶欠陥検出技術の開発
姚永昭, 石川由加里, 菅原義弘, 佐藤功二, 旦野克典, 鈴木寛, 坂本秀光, 別所毅
金属   83(5) 425-432   2013
炭化珪素における結晶欠陥検出技術の開発
姚永昭, 石川由加里, 菅原義弘, 佐藤功二, 旦野克典, 鈴木寛, 別所毅
Materials Integration   25(6) 16-20   2012

Conference Activities & Talks

 
Observation of dislocations in AlN single crystal by using synchrotron X-ray topography, etch pit method and transmission electron microscope
YZ. Yao, Y. Sugawara, Y. Ishikawa, D. Yokoe, N. Okada, R. Inomoto, K. Tadatomo, Y. Takahashi, K. Hirano
(ORAL) ISGN-7 (The 7th International Symposium on Growth of III-nitrides), Warsaw, Poland, Aug. 5-10, 2018   
Characterization of EFG-grown β-Ga2O3 single crystal by using Synchrotron X-ray topography, X-ray diffraction and Raman [Invited]
YZ. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi, K. Hirano
(INVITED TALK) IWGO 2017 (2nd International Workshop on Gallium Oxide and Related Materials), Parma, Italy, Sept. 12-15, 2017   
Observation of threading dislocations in ammono-thermal gallium nitride single crystal by using synchrotron X-ray topography
YZ. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi, K. Hirano
(ORAL) DRIP XVII (17th Defect-Recognition, Imaging and Physics in Semiconductors), Valladolid, Spain, Oct. 8-12, 2017   
Dislocation revelation and categorization for thick free-standing GaN substrates grown by HVPE
Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, K. Tadatomo
ECSCRM 2016 (European Conf. on SiC and Related Materials 2016), Halkidiki, Greece, Sept. 25-29, 2016 (Poster)   
Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits
YZ. Yao, Y. Ishikawa, M. Sudo, Y. Sugawara, D. Yokoe
(ORAL) ICCGE-18 (18th International Conference on Crystal Growth and Epitaxy), Nagoya, Japan, Aug. 7-12, 2016   
Elementary screw and mixed-type dislocations in 4H-SiC characterized by X-ray topography taken with six equivalent 11-28 g-vectors and a comparison to etch pit evaluation
YZ. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi, K. Hirano
ECSCRM 2016 (European Conf. on SiC and Related Materials 2016), Halkidiki, Greece, Sept. 25-29, 2016 (Poster)   
Revelation of dislocations in HVPE GaN single crystal by KOH etching with Na2O2 additive and cathodoluminescence mapping
YZ. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, K. Tadatomo
The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVI), Suzhou, China, Sept. 6-10, 2015 (Poster)   
Fast removal of surface damage layer from single crystal diamond by using chemical etching in molten KCl + KOH solution
YZ. Yao, Y. Ishikawa, Y. Sugawara, H. Yamada, A. Chayahara, Y.Mokuno
2015 9th International Conference on New Diamond and Nano Carbons, Shizuoka, Japan, May. 25-26, 2015 (Poster)   
Dislocations in SiC revealed by NaOH vapor etching and a comparison with X-ray topography taken with various g-vectors
YZ. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, T. Shirai, K. Sato, T. Bessho, Y. Takahashi, Y. Yamashita, K. Hirano
ICSCRM 2015 (International Conf. on SiC and Related Materials 2015), Giardini Naxos, Italy, Oct. 4-9, 2015 (Poster)   
Removal of mechanical polishing-induced surface damages by chemical etching and its effect on subsequent epitaxial growth
YZ. Yao, Y. Ishikawa, Y. Sugawara, K. Sato
10th European Conference on Silicon Carbide and Related Materials, Grenoble, France, Sept. 21-25, 2014 (Poster)   
Removal of mechanical-polishing-induced surface damages on 4H-SiC wafers by using chemical etching with molten KCl+KOH
YZ. Yao, Y. Ishikawa, Y. Sugawara, K. Sato
The International Conference on Silicon Carbide and Related Materials, Miyazaki, Japan, Sept. 29-Oct. 4, 2013 (Poster)   
Dislocation revelation for 4H-SiC by using vaporized NaOH: a possible way to distinguish edge, screw and mixed threading dislocations by etch pit method
YZ. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, H. Suzuki, H. Sakamoto, T. Bessho, S. Yamaguchi, K. Nishikawa
The International Conference on Silicon Carbide and Related Materials, Miyazaki, Japan, Sept. 29-Oct. 4, 2013 (Poster)   
Novel chemical etching technique using vaporized KOH for dislocation revelation from carbon-face (000-1) of 4H-SiC
YZ. Yao, Y. Ishikawa, K. Sato, Y. Sugawara, K. Danno, H. Suzuki, T. Bessho
9th European Conference on Silicon Carbide and Related Materials, Saint Petersburg, Russia, Sept. 2-6, 2012 (Poster)   
Electron beam induced current observation of dislocations in 4H-SiC introduced by mechanical polishing
YZ. Yao, K. Sato, Y. Sugawara, Y. Ishikawa, Y. Okamoto and N. Hayashi
14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Miyazaki, Japan, Sept. 26-29, 2011 (Poster)   
Dissociation of basal plane dislocations in 4H-SiC under electron beam irradiation observed by electron beam induced current and KOH+Na2O2 etching
YZ. Yao, Y. Sugawara, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho
International Symposium on EcoTopia Science 2011, Nagoya, Japan, Dec. 9-11, 2011 (Poster)   
Different dissociation behavior of [11-20] and non-[11-20] basal plane dislocations in 4H-SiC under electron beam irradiation
YZ. Yao, Y. Sugawara, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, Y. Kawai and N. Shibata
(ORAL) 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Miyazaki, Japan, Sept. 26-29, 2011   
Dislocation revelation in highly doped n-type 4H-SiC by molten KOH etching with Na2O2 additive
YZ. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata
8th European Conference on Silicon Carbide and Related Materials, Oslo, Norway, Aug. 29-Sept. 2, 2010 (Poster)   
Dislocation analysis in highly doped n-type 4H-SiC by using electron beam induced current and KOH+Na2O2 etching
YZ. Yao, Y. Sugawara, Y. Ishikawa, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata
8th European Conference on Silicon Carbide and Related Materials, Oslo, Norway, Aug. 29-Sept. 2, 2010 (Poster)   
Nitrogen isotopic effect on the properties of Ga15N grown by molecular-beam epitaxy
YZ. Yao, M. Ogawa, Y. Ishikawa, T. Ohgaki, N. Fukata, H. Haneda, and N. Ohashi
(ORAL) The 26th International Japan-Korea Seminar on Ceramics, Tsukuba, Japan, Nov. 24-26, 2009   
Lattice constants of isotopic natGa15N epilayers grown on c-plane sapphire
YZ. Yao, T. Ohgaki, K. Matsumoto, I. Sakaguchi, Y. Wada, H. Haneda, T. Sekiguchi and N. Ohashi
(ORAL) The International Conference on Nanophotonics 2009, Harbin, China, May 11-14, 2009   
Isotopic effect of nitrogen substitution on the lattice of Ga15N
YZ. Yao, T. Ohgaki, K. Matsumoto, I. Sakaguchi, Y. Wada, H. Haneda, T. Sekiguchi and N. Ohashi
The 3rd International Conference on the Science and Technology for Advanced Ceramics, Yokohama, Japan, Jun. 16-18, 2009 (Poster, presented by T. Ohgaki)   
Growth and characterization of isotopic natGa15N by molecular-beam epitaxy
YZ. Yao, T. Ohgaki, K. Matsumoto, I. Sakaguchi, Y. Wada, H. Haneda, T. Sekiguchi and N. Ohashi
(ORAL) International Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008   
InN Growth by Plasma-Assisted Molecular-Beam Epitaxy with Indium Monolayer Insertion
YZ. Yao, T. Sekiguchi, Y. Sakuma, N. Ohashi, Y. Adachi, H. Okuno, and M. Takeguchi
4th International Nanotechnology Conference (INC4), Tokyo, Apr. 14-17, 2008 (Poster)   
Fabrication of GaN film by Molecular Beam Epitaxy for InN growth
YZ. Yao, T. Sekiguchi, Y. Sakuma and N. Ohashi
4th NIMS International Conference on Photonic Processes in Semiconductor Nanostructures, Tokyo, Mar. 7-10, 2006 (Poster)   
The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxy
YZ. Yao, T. Sekiguchi, Y. Sakuma and N. Ohashi
14th International Conference on Molecular Beam Epitaxy (MBE2006), Tokyo, Sept. 3-8, 2006 (Poster)