Yongzhao Yao

Profile Information

Affiliation: Mie University

Degree: 博士（工学）(筑波大学)

Contact information: yaoicsdf.mie-u.ac.jp
Researcher number: 80523935
J-GLOBAL ID: 201801017983395447
researchmap Member ID: B000328269

Research Interests

Major Research Areas

Major Research History

Apr, 2024 - Present

Mie University
Jun, 2023 - Mar, 2024

Japan Fine Ceramics Center
Jul, 2021 - May, 2023

主任研究員, (一財)ファインセラミックスセンター
May, 2018 - Mar, 2023

National Institute for Materials Science
Jun, 2009 - Jun, 2021

Japan Fine Ceramics Center
Jan, 2008 - May, 2009

Postdoctoral Researcher, National Institute for Materials Science
Sep, 2004 - Dec, 2007

National Institute for Materials Science

Education

Sep, 2004 - Dec, 2007

University of Tsukuba
Sep, 2001 - Jul, 2004

電気電子工学専攻（修士号取得）, 電気電子工学研究科, 中国清華大学大学院
Sep, 1997 - Jul, 2001

電気電子工学専攻（学士号取得）, 電気電子工学部, 中国清華大学

Major Committee Memberships

Apr, 2024 - Present

科学技術専門家ネットワーク・専門調査員, 文部科学省科学技術予測・政策基盤調査研究センター
Apr, 2024 - Present

SPring-8/SACLA成果審査委員会査読者
Nov, 2022 - Present

Technical Program Committee, 国際会議SSDM 2023
Sep, 2022 - Present

International Steering Committee, 国際会議DRIP
Feb, 2020 - Sep, 2023

実行委員, 国際会議DRIP XIX
Nov, 2021 - Nov, 2022

Technical Program Committee, 国際会議SSDM 2022
Nov, 2020 - Nov, 2021

Technical Program Committee, 国際会議SSDM 2021
Apr, 2018 - Mar, 2021

GaN結晶の転位検出方法に関する国際標準化委員, 国際標準化

Major Awards

Apr, 2023

2023年度研究助成, 公益財団法人池谷科学技術振興財団

姚永昭
Dec, 2022

2022年度（第54回）倉田奨励金, 公益財団法人日立財団

姚永昭
Oct, 2022

2022年度基礎科学研究助成, 公益財団法人住友財団

姚永昭
Nov, 2021

2021年度研究助成, 公益財団法人大倉和親記念財団

姚永昭
Jul, 2021

第46回学術写真賞優秀賞, 公益社団法人日本セラミックス協会

姚永昭、石川由加里、菅原義弘、佐藤功二、横江大作
Jun, 2021

2021年度研究助成, 公益財団法人村田学術振興財団

姚永昭
Mar, 2020

第42回研究助成, 公益財団法人日本板硝子材料工学助成会

姚永昭
Mar, 2020

Award of Collaborative Research, The NAGAI Foundation for Science & Technology
Sep, 2018

第12回応用物理学会Poster Award, 放射光X線トポグラフィによるPVT法AlN単結晶基板の転位評価, 公益社団法人応用物理学会

姚永昭, 菅原義弘, 石川由加里, 岡田成仁, 井本良, 只友一行, 高橋由美子, 平野馨一
Sep, 2013

第35回（2013年度）応用物理学会論文賞, Dislocation Revelation from (000-1) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature 【Y. Yao, et al, APEX 5, 075601 (2012).】, 公益社団法人応用物理学会

姚永昭
Jun, 2013

2012年 Journal of the Ceramic Society of Japan 優秀論文賞, Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy, 公益社団法人日本セラミックス協会

姚永昭, 関口隆史, 大垣武, 安達裕, 大橋直樹
May, 2012

平成23年度技術振興賞, 炭化ケイ素ウエハの簡易な欠陥検出法の開発, 一般社団法人日本ファインセラミックス協会

姚永昭, 石川由加里, 菅原義弘, 河合洋一郎, 鈴木寛, 斎藤広明, 旦野克典
Dec, 2011

第11回講演会講演奨励賞, 公益社団法人日本表面科学会中部支部

姚永昭
Dec, 2008

第5回元東京大学総長向坊隆記念研究奨励賞, 一般社団法人日中科学技術交流協会

姚永昭

Major Papers

Anisotropic mechanical properties of β-Ga₂O₃ single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter【Open Access】

Yongzhao Yao, Yoshihiro Sugawara, Kohei Sasaki, Akito Kuramata, Yukari Ishikawa

Journal of Applied Physics, 134 215106, Dec, 2023 Peer-reviewedLead author
Three-dimensional distribution and propagation of dislocations in β-Ga₂O₃ revealed by Borrmann effect X-ray topography【Open Access】

Yongzhao Yao, Yoshiyuki Tsusaka, Keiichi Hirano, Kohei Sasaki, Akito Kuramata, Yoshihiro Sugawara, Yukari Ishikawa

Journal of Applied Physics, 134 155104, Oct, 2023 Peer-reviewedLead author
★【Editor’s Choice】Lattice misorientation at domain boundaries in β‐Ga₂O₃ single‐crystal substrates observed via synchrotron radiation x‐ray diffraction imaging and x‐ray reticulography【Open Access】

Yongzhao Yao, Keiichi Hirano, Kohei Sasaki, Akito Kuramata, Yoshihiro Sugawara, Yukari Ishikawa

Journal of the American Ceramic Society, 106 5487-5500, Apr, 2023 Peer-reviewedLead author
X-ray topographic observation of dislocations in β-Ga₂O₃ Schottky barrier diodes and their glide and multiplication under reverse bias【Open Access】

Yongzhao Yao, Daiki Wakimoto, Hironobu Miyamoto, Kohei Sasaki, Akito Kuramata, Keiichi Hirano, Yoshihiro Sugawara, Yukari Ishikawa

Scripta Materialia, 226 115216, Jan, 2023 Peer-reviewedLead author
Domain boundaries in ScAlMgO₄ single crystal observed by synchrotron radiation x-ray topography and reticulography

Yongzhao Yao, Keiichi Hirano, Yoshihiro Sugawara, Yukari Ishikawa

Semiconductor Science and Technology, 37 115009, Oct, 2022 Peer-reviewedLead author
★【Featured Article】Large-area total-thickness imaging and Burgers vector analysis of dislocations in β-Ga₂O₃ using bright-field x-ray topography based on anomalous transmission

Yongzhao Yao, Yoshiyuki Tsusaka, Kohei Sasaki, Akito Kuramata, Yoshihiro Sugawara, Yukari Ishikawa

Applied Physics Letters, 121 012105, Jul, 2022 Peer-reviewedLead author
Observation of threading dislocations with a c+m type Burgers vector in HVPE GaN substrates using multi-photon excitation photoluminescence and TEM

Yongzhao Yao, Yoshihiro Sugawara, Koji Sato, Narihito Okada, Kazuyuki Tadatomo, Yukari Ishikawa

Journal of Crystal Growth, 592 126748, Jun, 2022 Peer-reviewedLead author
★【Editor's Pick】Observation of dislocations in thick β-Ga₂O₃ single-crystal substrates using Borrmann effect synchrotron x-ray topography【Open Access】

Yongzhao Yao, Keiichi Hirano, Yoshihiro Sugawara, Kohei Sasaki, Akito Kuramata, Yukari Ishikawa

APL Materials, 10 051101, May, 2022 Peer-reviewedLead author
Etch pit formation on β-Ga₂O₃ by molten KOH+NaOH and hot H₃PO₄ and their correlation with dislocations

Yongzhao Yao, Yoshihiro Sugawara, Koji Sato, Daisaku Yokoe, Kohei Sasaki, Akito Kuramata, Yukari Ishikawa

Journal of Alloys and Compounds, 910 164788, Mar, 2022 Peer-reviewedLead author
Three-dimensional curving of crystal planes in wide bandgap semiconductor wafers visualized using a laboratory X-ray diffractometer

Yongzhao Yao, Koji Sato, Yoshihiro Sugawara, Narihito Okada, Kazuyuki Tadatomo, Kohei Sasaki, Akito Kuramata, Yukari Ishikawa

Journal of Crystal Growth, 583 126558, Feb, 2022 Peer-reviewedLead author
Mechanism of molten KOH+NaOH etching of GaN revealed by the slopes of etch pits formed at threading dislocations

Yongzhao Yao, Koji Sato, Yoshihiro Sugawara, Yukari Ishikawa

Journal of Alloys and Compounds, 902 163830, Jan, 2022 Peer-reviewedLead author
Visualization of the curving of crystal planes in β-Ga2O3 by X-ray topography

Yongzhao Yao, Keiichi Hirano, Yumiko Takahashi, Yoshihiro Sugawara, Kohei Sasaki, Akito Kuramata, Yukari Ishikawa

Journal of Crystal Growth, 576 126376-126376, Dec, 2021 Peer-reviewedLead author
A synchrotron X-ray topography study of crystallographic defects in ScAlMgO₄ single crystals

Yongzhao Yao, Keiichi Hirano, Hirotaka Yamaguchi, Yoshihiro Sugawara, Narihito Okada, Kazuyuki Tadatomo, Yukari Ishikawa

Journal of Alloys and Compounds, 896 163025, Dec, 2021 Peer-reviewedLead author
Anisotropic radius of curvature of crystal planes in wide-bandgap semiconductor wafers measured by x-ray diffraction

Yongzhao YAO, Yoshihiro Sugawara, Daisaku Yokoe, Keiichi HIRANO, Narihito OKADA, Kazuyuki TADATOMO, kohei SASAKI, Akito Kuramata, Yukari Ishikawa

Japanese Journal of Applied Physics, 60 128004, Nov, 2021 Peer-reviewedLead author
X-ray topography of crystallographic defects in wide-bandgap semiconductors using a high-resolution digital camera

Yongzhao YAO, Yoshihiro Sugawara, Yukari ISHIKAWA, Keiichi HIRANO

Japanese Journal of Applied Physics, 60 010908, Jan, 2021 Peer-reviewedLead author
★【該当号表紙】Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy【Open Access】

Yong-Zhao Yao, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yukari Ishikawa, Narihito Okada, Kazuyuki Tadatomo, Masaki Sudo, Masashi Kato, Makoto Miyoshi …

CrystEngComm, 22 8299-8312, Dec, 2020 Peer-reviewedLead author
Slip planes in monoclinic β-Ga₂O₃ revealed from its {010} face via synchrotron X-ray diffraction and X-ray topography

Yongzhao YAO, Yukari ISHIKAWA, Yoshihiro Sugawara

Japanese Journal of Applied Physics, 59 125501, Oct, 2020 Peer-reviewedLead author
Study of dislocations in AlN single-crystal using bright-field synchrotron X-ray topography under a multiple-beam diffraction condition

Y. Yao, Y. Tsusaka, Y. Ishikawa, Y. Sugawara, Y. Fujita, J. Matsui, N. Okada, K. Tadatomo

Applied Physics Letters, 117 092102, Sep, 2020 Peer-reviewedLead author
Crystallinity evaluation and dislocation observation for an aluminum nitride single crystal substrate on a wafer scale

Y. Yao, Y. Sugawara, Y. Ishikawa, N. Okada, K. Tadatomo

JOURNAL OF ELECTRONIC MATERIALS, 49 5144-5153, Sep, 2020 Peer-reviewedLead author
Dislocation classification of a large-area β-Ga₂O₃ single crystal via contrast analysis of affine-transformed X-ray topographs

Yongzhao Yao, Yukari Ishikawa, Yoshihiro Sugawara

Journal of Crystal Growth, 548 125825, Jul, 2020 Peer-reviewedLead author
Identification of Burgers vectors of dislocations in monoclinic β-Ga₂O₃ via synchrotron X-ray topography

Y. Yao, Y. Sugawara, Y. Ishikawa

JOURNAL OF APPLIED PHYSICS, 127 205110, May, 2020 Peer-reviewedLead author
Observation of dislocations in β-Ga₂O₃ single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy

Y. Yao, Y. Sugawara, Y. Ishikawa

JAPANESE JOURNAL OF APPLIED PHYSICS, 59 045502, Mar, 2020 Peer-reviewedLead author
★【該当号裏表紙】Revelation of Dislocations in β-Ga₂O₃ Substrates Grown by Edge‐Defined Film‐Fed Growth

Y. Yao, Y. Ishikawa, Y. Sugawara

PHYSICA STATUS SOLIDI A, 217 1900630, Feb, 2020 Peer-reviewedLead author
★【Editor's Pick】X-ray diffraction and Raman characterization of β-Ga₂O₃ single crystal grown by edge-defined film-fed growth method

Y. Yao, Y. Ishikawa, Y. Sugawara

JOURNAL OF APPLIED PHYSICS, 126 205106, Nov, 2019 Peer-reviewedLead author
Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography

Y. Yao, Y. Sugawara, Y. Ishikawa, N. Okada, K. Tadatomo, Y. Takahashi, K. Hirano

JAPANESE JOURNAL OF APPLIED PHYSICS, 58 SCCB29, May, 2019 Peer-reviewedLead author
Observation of Threading Dislocations in Ammonothermal Gallium Nitride Single Crystal Using Synchrotron X-ray Topography

Y. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi, K. Hirano

Journal of Electronic Materials, 47 5007-5012, Apr 2, 2018 Peer-reviewedLead author
Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits

Yao, Yongzhao, Ishikawa, Yukari, Sudo, Masaki, Sugawara, Yoshihiro, Yokoe, Daisaku

JOURNAL OF CRYSTAL GROWTH, 468 484-488, Jun, 2017 Peer-reviewedLead author
Revelation of dislocations in HVPE GaN single crystal by KOH etching with Na₂O₂ additive and cathodoluminescence mapping

Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, K. Tadatomo

SUPERLATTICES AND MICROSTRUCTURES, 99 83-87, Nov, 2016 Peer-reviewedLead author
Fast removal of surface damage layer from single crystal diamond by using chemical etching in molten KCl plus KOH solution

Y. Yao, Y. Ishikawa, Y. Sugawara, H. Yamada, A. Chayahara, Y. Mokuno

DIAMOND AND RELATED MATERIALS, 63 86-90, Mar, 2016 Peer-reviewedLead author
Cross-sectional observation of stacking faults in 4H-SiC by KOH etching on nonpolar {1-100} face, cathodoluminescence imaging, and transmission electron microscopy

Yongzhao Yao, Yukari Ishikawa, Yoshihiro Sugawara, Koji Sato, Takayuki Shirai, Katsunori Danno, Hiroshi Suzuki, Hidemitsu Sakamoto, Takeshi Bessho, Benjamin Dierre …

JAPANESE JOURNAL OF APPLIED PHYSICS, 53(8) 081301, Aug, 2014 Peer-reviewedLead author
Correlation between etch pits formed by molten KOH+Na₂O₂ etching and dislocation types in heavily doped n(+)-4H-SiC studied by X-ray topography

Yongzhao Yao, Yukari Ishikawa, Yoshihiro Sugawara, Koji Sato, Katsunori Danno, Hiroshi Suzuki, Takeshi Bessho, Satoshi Yamaguchi, Koichi Nishikawa

JOURNAL OF CRYSTAL GROWTH, 364 7-10, Feb, 2013 Peer-reviewedLead author
★【セラ協論文賞】Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy

Yongzhao Yao, Takashi Sekiguchi, Takeshi Ohgaki, Yutaka Adachi, Naoki Ohashi

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 120(1407) 513-519, Nov, 2012 Peer-reviewedLead author
★【応物論文賞】Dislocation Revelation from ($000\bar{1}$) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature

Yong-Zhao Yao, Yukari Ishikawa, Koji Sato, Yoshihiro Sugawara, Katsunori Danno, Hiroshi Suzuki, Takeshi Bessho

Applied Physics Express, 5(7) 075601-075601, Jun 22, 2012 Peer-reviewedLead author
Molten KOH Etching with Na₂O₂ Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Yong-Zhao Yao, Yukari Ishikawa, Yoshihiro Sugawara, Hiroaki Saitoh, Katsunori Danno, Hiroshi Suzuki, Yoichiro Kawai, Noriyoshi Shibata

JAPANESE JOURNAL OF APPLIED PHYSICS, 50(7) 075502, Jul, 2011 Peer-reviewedLead author
A simultaneous observation of dislocations in 4H-SiC epilayer and n⁺-substrate by using electron beam induced current

Yong-Zhao Yao, Yoshihiro Sugawara, Yukari Ishikawa, Hiroaki Saitoh, Katsunori Danno, Hiroshi Suzuki, Yoichiro Kawai, Noriyoshi Shibata

JOURNAL OF APPLIED PHYSICS, 109(12) 123524, Jun, 2011 Peer-reviewedLead author
Nitrogen isotopic effect in Ga¹⁵N epifilms grown by plasma-assisted molecular-beam epitaxy

Yong-zhao Yao, Takeshi Ohgaki, Naoki Fukata, Yutaka Adachi, Yoshiki Wada, Hajime Haneda, Naoki Ohashi

SCRIPTA MATERIALIA, 62(7) 516-519, Apr, 2010 Peer-reviewedLead author
Investigation on buffer layer for InN growth by molecular beam epitaxy

Yongzhao Yao, Takashi Sekiguchi, Takeshi Ohgaki, Yutaka Adachi, Naoki Ohashi

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 118(1374) 152-156, Feb, 2010 Peer-reviewedLead author
Periodic supply of indium as surfactant for N-polar InN growth by plasma-assisted molecular-beam epitaxy

Yong-Zhao Yao, Takashi Sekiguchi, Takeshi Ohgaki, Yutaka Adachi, Naoki Ohashi, Hanako Okuno, Masaki Takeguchi

APPLIED PHYSICS LETTERS, 95 041913, Jul, 2009 Peer-reviewedLead author
Growth and characterization of isotopic ^natGa¹⁵N by molecular-beam epitaxy

Yong-zhao Yao, Takeshi Ohgaki, Kenji Matsumoto, Isao Sakaguchi, Yoshiki Wada, Hajime Haneda, Takashi Sekiguchi, Naoki Ohashi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 6 S707-S710, 2009 Peer-reviewedLead author
Photoluminescence and x-ray diffraction measurements of InN epifilms grown with varying In/N ratio by plasma-assisted molecular-beam epitaxy

Yong-Zhao Yao, Takashi Sekiguchi, Naoki Ohashi, Yutaka Adachi, Takeshi Ohgaki

APPLIED PHYSICS LETTERS, 92(21) 211910, May, 2008 Peer-reviewedLead author
InN Growth by Plasma-Assisted Molecular Beam Epitaxy with Indium Monolayer Insertion

Y. Yao, T. Sekiguchi, Y. Sakuma, N. Ohashi, Y. Adachi, H. Okuno, M. Takeguchi

CRYSTAL GROWTH & DESIGN, 8(3) 1073-1077, Feb, 2008 Peer-reviewedLead author
The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxy

Yongzhao Yao, Takashi Sekiguchi, Yoshiki Sakuma, Naoki Ohashi

JOURNAL OF CRYSTAL GROWTH, 301 521-524, Apr, 2007 Peer-reviewedLead author
Cathodoluminescence characterization of GaN quantum dots grown on 6H-SiC substrate by metal-organic chemical vapor deposition

Yongzhao Yao, Takashi Sekiguchi, Yoshiki Sakunia, Makoto Miyamura, Yasuhiko Arakawa

SCRIPTA MATERIALIA, 55 679-682, Oct, 2006 Peer-reviewedLead author

Misc.

Ｘ線異常透過を利用した酸化ガリウム結晶欠陥撮影

姚永昭

公益社団法人日本アイソトープ協会 Isotope News, (789) 24-28, Oct, 2023 InvitedLead author
低損失パワーデバイス用半導体材料β-Ga2O3 の転位評価技術の開発

姚永昭

（公財）日本板硝子材料工学助成会 NSG Found. Mat. Sci. Eng. Rep., 41 203-209, Aug, 2023 Lead author
Crystallinity evaluation of ultra-wide bandgap semiconductor wafers using Raman, X-ray diffraction, and etch pit method

Yongzhao Yao, Yukari Ishikawa

Jasco Report, 63(1), Jan, 2021 InvitedLead author
炭化ケイ素ウエハの簡易な欠陥検出法の開発

姚永昭, 石川由加里, 菅原義弘, 斎藤広明, 旦野克典, 鈴木寛, 河合洋一郎

FC Report, 31(1) 12-14, 2013 InvitedLead author
低損失・省エネパワーデバイス用SiC結晶欠陥検出技術の開発

姚永昭, 石川由加里, 菅原義弘, 佐藤功二, 旦野克典, 鈴木寛, 坂本秀光, 別所毅

金属, 83(5) 425-432, 2013 Lead author
炭化珪素における結晶欠陥検出技術の開発

姚永昭, 石川由加里, 菅原義弘, 佐藤功二, 旦野克典, 鈴木寛, 別所毅

Materials Integration, 25(6) 16-20, 2012 Lead author

Major Presentations

Visualization of structural defects in β-Ga₂O₃ using synchrotron X-ray techniques for power-device application

Yongzhao Yao, Kohei Sasaki, Daiki Wakimoto, Hironobu Miyamoto, Akito Kuramata, Yukari Ishikawa

Mar 4, 2024 Invited
Synchrotron-radiation X-ray topographic and X-ray reticulographic observation of AlN single-crystal substrates

Yongzhao Yao, Yoshiyuki Tsusaka, Keiichi Hirano, Koji Sato, Yoshihiro Sugawara, Narihito Okada, Kazuyuki Tadatomo, Yukari Ishikawa

Nov 17, 2023
Observation of dislocations in thick GaN substrates using synchrotron-radiation X-ray topography based on anomalous transmission

Yongzhao Yao, Yoshiyuki Tsusaka, Keiichi Hirano, Koji Sato, Yoshihiro Sugawara, Yukari Ishikawa

Nov 15, 2023
Operando and ex-situ X-ray topographic observation of dislocations in β-Ga₂O₃ Schottky barrier diodes and their glide and multiplication under device operation

Oct 26, 2022
Dislocation analysis for large-area thick EFG β-Ga₂O₃ substrates using Borrmann effect synchrotron x-ray topography

姚永昭

(ORAL) IWGO-4 (The 4th International Workshop on Gallium Oxide and Related Materials), Nagano, Japan, Oct 23-27, 2022, Oct 26, 2022
Structural defects in beta-Ga₂O₃ analyzed by X-ray topography and complementary techniques

姚永昭

(INVITED TALK) The 19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XIX), Aug 31, 2022 Invited
放射光X線トポグラフィー・エッチピット法によるβ-Ga₂O₃単結晶基板の評価

姚永昭

(INVITED TALK) 日本学術振興会「結晶加工と評価技術」第145委員会第173回研究会, Dec 8, 2021 Invited
Dislocation characterization for AlN single crystal on a wafer scale

姚永昭, Y. Ishikawa, Y. Sugawara, N. Okada, K. Tadatomo

(ORAL) DRIP XVIII (18th Defect-Recognition, Imaging and Physics in Semiconductors), Berlin, Germany, Sept. 8-12, 2019, Sep, 2019
Synchrotron X-ray topography observation of dislocations with Burgers vector of n<010> in β-Ga₂O₃ single crystal grown by edge-defined film-fed growth method

姚永昭, Y. Sugawara, Y. Ishikawa

(ORAL) DRIP XVIII (18th Defect-Recognition, Imaging and Physics in Semiconductors), Berlin, Germany, Sept. 8-12, 2019, Sep, 2019
Synchrotron X-ray topography topography observation and classification of dislocations in β-Ga₂O₃ single crystal substrates grown by EFG

姚永昭, Y. Sugawara, Y. Ishikawa, Y. Takahashi, K. Hirano

(ORAL) CSW2019 (Compound Semiconductor Week 2019), Nara, Japan, May 19-23, 2019, May, 2019
Revelation and classification of dislocations in GaN single crystal for power device application

姚永昭

(INVITED TALK) The 4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4), Nov 20, 2018 Invited
Observation of dislocations and their arrays in PVT-grown AlN single crystal substrate by synchrotron X-ray topography

姚永昭, Y. Sugawara, Y. Ishikawa, D. Yokoe, N. Okada, R. Inomoto, K. Tadatomo, Y. Takahashi, K. Hirano

(ORAL) IWN2018 (The International Workshop on Nitride Semiconductors 2018), Kanazawa, Japan, Nov. 11-16, 2018, Nov, 2018
β-Ga₂O₃結晶中の転位の評価

姚永昭

(INVITED TALK) 日本学術振興会「結晶加工と評価技術」第145委員会第160回研究会, Oct 19, 2018 Invited
Observation of dislocations in AlN single crystal by using synchrotron X-ray topography, etch pit method and transmission electron microscope

YZ. Yao, Y. Sugawara, Y. Ishikawa, D. Yokoe, N. Okada, R. Inomoto, K. Tadatomo, Y. Takahashi, K. Hirano

(ORAL) ISGN-7 (The 7th International Symposium on Growth of III-nitrides), Warsaw, Poland, Aug. 5-10, 2018, Aug, 2018
Observation of threading dislocations in ammono-thermal gallium nitride single crystal by using synchrotron X-ray topography

YZ. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi, K. Hirano

(ORAL) DRIP XVII (17th Defect-Recognition, Imaging and Physics in Semiconductors), Valladolid, Spain, Oct. 8-12, 2017, Oct, 2017
Characterization of EFG-grown β-Ga₂O₃ single crystal by using Synchrotron X-ray topography, X-ray diffraction and Raman

YZ. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi, K. Hirano

(INVITED TALK) IWGO 2017 (2nd International Workshop on Gallium Oxide and Related Materials), Parma, Italy, Sept. 12-15, 2017, Sep, 2017 Invited
Dislocation revelation and categorization for thick free-standing HVPE-GaN by using etch pits, cathodoluminescence mapping and TEM

Nov 9, 2016 Invited
Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits

YZ. Yao, Y. Ishikawa, M. Sudo, Y. Sugawara, D. Yokoe

(ORAL) ICCGE-18 (18th International Conference on Crystal Growth and Epitaxy), Nagoya, Japan, Aug. 7-12, 2016, Aug, 2016
Dislocation Revelation from (000-1) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature

Yongzhao Yao

(INVITED TALK) 応用物理学会第74回秋季学術講演会論文賞受賞記念講演, Sep 17, 2013 Invited

Teaching Experience

Oct, 2024 - Mar, 2025

材料科学 (三重大学)
Apr, 2024 - Sep, 2024

半導体デバイス特論 (三重大学)

Professional Memberships

Major Research Projects

実動作中のワイドギャップ半導体パワーデバイスにおける転位の動的な挙動の観察

科学研究費助成事業・挑戦的研究（開拓）, 独立行政法人日本学術振興会, Jul, 2023 - Mar, 2027

姚永昭(代表者)
パワーデバイス劣化機構の解明に向けた格子欠陥のオペランド観察技術の開発

科学研究費助成事業・基盤 (B), 独立行政法人日本学術振興会, Apr, 2023 - Mar, 2027

姚永昭(代表者)
実動作中のパワーデバイスにおける転位挙動のオペランド観測法の開発

2023年度研究助成, 公益財団法人池谷科学技術振興財団, Apr, 2023 - Mar, 2024

姚永昭(代表者)
β型Ga2O3パワーデバイスにおける結晶欠陥挙動の観測

倉田奨励金, 公益財団法人日立財団, Mar, 2023 - Mar, 2024

姚永昭 (代表者)
動作中のβ型酸化ガリウムパワーデバイスにおける結晶欠陥挙動のオペランド観測

2022年度基礎科学研究助成, 公益財団法人住友財団, Nov, 2022 - Nov, 2023

姚永昭 (代表者)
低損失パワーデバイス用半導体材料β-Ga2O3の転位評価技術の開発

2020年度助成金, 公益財団法人日本板硝子材料工学助成会, Apr, 2020 - Mar, 2023

姚永昭 (代表者)
次世代パワー半導体β型酸化ガリウムの大面積転位検出分類法の開発

科学研究費助成事業・基盤C, 独立行政法人日本学術振興会, Apr, 2020 - Mar, 2023

姚永昭 (代表者)
次世代パワー半導体材料における結晶欠陥の非破壊三次元可視化技術の開発

2021年度研究助成, 公益財団法人大倉和親記念財団, Jan, 2022 - Dec, 2022

姚永昭 (代表者)
多波回折条件下の明視野放射光X線トポグラフィーによるβ型Ga2O3パワーデバイス内の格子欠陥の動的観察

2021年度研究助成, 公益財団法人村田学術振興財団, Oct, 2021 - Sep, 2022

姚永昭 (代表者)
AlNを用いたヘテロ接合型超高耐圧・大電流パワーデバイスとAlN結晶評価技術の開発

エネルギー・環境新技術先導プログラム／未踏チャレンジ2050, 国立研究開発法人新エネルギー・産業技術総合開発機構, Oct, 2017 - Sep, 2022

姚永昭 (代表者)
次世代パワー半導体材料酸化ガリウムの結晶欠陥検出法の開発

科学研究費助成事業・若手研究B, 独立行政法人日本学術振興会, Apr, 2016 - Mar, 2018

姚永昭 (代表者)
パワーデバイス用炭化珪素ウエハに対する低欠陥加工技術の開発

研究成果展開事業研究成果最適展開支援プログラム(A-STEP), 国立研究開発法人科学技術振興機構, Nov, 2012 - Oct, 2013

姚永昭 (代表者)

Major Industrial Property Rights

特願2022-145521 結晶欠陥評価装置、結晶欠陥評価方法、結晶欠陥評価のためのコンピュータプログラムおよびインライン結晶欠陥評価システム

姚永昭, 石川由加里
特願2021-148810 半導体基板の結晶面の形状評価方法および形状評価装置、ならびに、半導体基板の結晶面の形状評価を行うためのコンピュータプログラム

姚永昭, 石川由加里, 菅原義弘
特許第7292089号炭化珪素膜の製造方法

末廣智, 木村禎一, 姚永昭
特許第7228440号転位の評価方法および転位の評価を行うためのコンピュータプログラム

姚永昭, 石川由加里
特許第6890979号窒化物系半導体の非極性面のエッチング方法および窒化物系半導体の非極性面における結晶欠陥の検出方法

姚永昭, 石川由加里
特許第6574104号窒化物系半導体のエッチング方法および窒化物系半導体の結晶欠陥検出方法

姚永昭, 石川由加里
特許第6461593号窒化物系半導体基板のエッチング方法、窒化物系半導体膜の作成方法

姚永昭, 石川由加里
特許第6422157号ダイヤモンドのエッチング方法、ダイヤモンドの結晶欠陥の検出方法、およびダイヤモンド結晶の結晶成長方法

姚永昭, 石川由加里, 山田英明, 茶谷原昭義
特許第6022972号 SiC結晶の検査方法及びそれを用いたSiC結晶の製造方法

旦野克典, 石川由加里, 姚永昭, 佐藤功二
特許第6329733号半導体ウェハのエッチング方法、半導体ウェハとその製造方法および半導体ウェハの結晶欠陥検出方法

姚永昭, 石川由加里
特許第5558268号半導体単結晶基板の欠陥観察方法

旦野克典, 斎藤広明, 石川由加里, 姚永昭, 菅原義弘, 柴田典義
特許第5519305号炭化珪素単結晶の欠陥検出方法

旦野克典, 斎藤広明, 石川由加里, 姚永昭, 柴田典義
特許第4873705号窒化インジウム（ＩｎＮ）あるいは高インジウム組成を有する窒化インジウムガリウム（ＩｎＧａＮ）エピタキシャル薄膜の形成方法

佐久間芳樹, 姚永昭, 関口隆史, 大橋直樹

Major Media Coverage

β型酸化ガリウム結晶の格子欠陥可視化、品質改善に道筋

日経XTECH, Jan, 2023 Internet
酸化ガリウムの結晶欠陥、撮影に成功した意義

Yahooニュース, Dec, 2022 Internet
β型酸化ガリウム結晶の非破壊検査手法を開発

fabcross for エンジニア, Dec, 2022 Internet
X線の異常透過現象を利用 β型酸化ガリウム結晶の格子欠陥を非破壊で検出

EE Times Japan, Dec, 2022 Internet
β型酸化ガリウム結晶欠陥を可視化ー「異常透過現象」利用

化学工業日報, Dec, 2022 Newspaper, magazine
ファインセラセンターなど、酸化ガリウムの結晶欠陥撮影Ｘ線異常透過現象を利用

日刊工業新聞, Dec, 2022 Newspaper, magazine
半導体基板の原子レベルの湾曲を3Dで可視化―新たな加工技術などの応用に期待

毎日新聞, Jul, 2022 Newspaper, magazine
次世代半導体の高性能化を後押しする新技術

フジサンケイビジネスアイ, Sep, 2020 Newspaper, magazine
窒化ガリウム結晶欠陥 JFCC・高エネ機構が非破壊検出技術

日刊工業新聞, Aug, 2018 Newspaper, magazine
GaN結晶の欠陥を短時間かつ非破壊で検出する方法を確立―青色LEDなどの高品質化を加速

fabcross for エンジニア, Aug, 2018 Internet
窒化ガリウム結晶の欠陥を正確に非破壊で検出可能に―次世代パワーデバイスの開発加速

つくばサイエンスニュース, Jul, 2018 Internet
JFCCら、大面積のGaN結晶から各種欠陥を検出

OPTRONICS ONLINE, Jul, 2018 Internet
窒化ガリウム結晶非破壊で欠陥検出 JFCC-KEK X線回折を利用

化学工業日報, Jul, 2018 Newspaper, magazine
次世代半導体材料の結晶を簡単、短時間に評価～アルカリ性溶解液で欠陥を検出～

毎日新聞, Jun, 2016 Newspaper, magazine
次世代パワーデバイス材料4H-SiCカーボン面転位検出技術の開発

中部経済新聞, Jun, 2013 Newspaper, magazine
欠陥を容易に検出～デバイス品質向上期待～

化学工業日報, Jul, 2011 Newspaper, magazine

Profile Information

Research Interests

Major Research Areas

Major Research History

Education

Major Committee Memberships

Major Awards

Major Papers

Misc.

Major Presentations

Teaching Experience

Professional Memberships

Major Research Projects

Major Industrial Property Rights

Major Media Coverage

Menu

Coauthors