論文

査読有り
2020年7月1日

Impacts of density of deposited dielectric films on temperature dependence of interface dipole layer strength in multilayered dielectric capacitors for energy harvesting

Japanese Journal of Applied Physics
  • Takashi Hamaguchi
  • ,
  • Koji Kita

59
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.35848/1347-4065/ab8bbe
出版者・発行元
IOP PUBLISHING LTD

© 2020 The Japan Society of Applied Physics. We have proposed and successfully demonstrated the operation principle of the energy harvesting method with multi-dielectric layer capacitors in a temperature fluctuating environment, and showed that the temperature coefficient of the flat-band voltage (V FB) is one of the important factors to enhance its efficiency. Next, we investigated the impact of densities of both SiO2 and Al2O3 deposited films on measurement temperature dependence of the Al2O3/SiO2 interface dipole layer strength. A positive temperature coefficient of dipole layer strength was pronounced only when SiO2 was grown at a high temperature and Al2O3 was annealed at low temperature. It was suggested that both oxides were required to have a lower density for the positive temperature coefficient. These results indicate a guideline to control the temperature coefficient of dipole layer strength of a Al2O3/SiO2/Al2O3/SiO2••• multilayer stack, which is one of the important factors to determine the efficiency of the proposed energy harvesting method.

リンク情報
DOI
https://doi.org/10.35848/1347-4065/ab8bbe
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000546611400008&DestApp=WOS_CPL
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85085653484&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85085653484&origin=inward
ID情報
  • DOI : 10.35848/1347-4065/ab8bbe
  • ISSN : 0021-4922
  • eISSN : 1347-4065
  • SCOPUS ID : 85085653484
  • Web of Science ID : WOS:000546611400008

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