三輪和弘 (Kazuhiro Miwa) - マイポータル

基本情報

所属: 名古屋大学低温プラズマ科学研究センター

学位: 博士（工学）(名古屋大学)

J-GLOBAL ID: 201001022668115880
researchmap会員ID: 6000024787

研究分野

ナノテク・材料 / ナノマイクロシステム / プラズマプロセス

経歴

学歴

- 2010年

名古屋大学大学院, 工学研究科, 電子情報システム

論文

Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation

Tomohiro Kubota, Hiroto Ohtake, Ryosuke Araki, Yuuki Yanagisawa, Takuya Iwasaki, Kohei Ono, Kazuhiro Miwa, Seiji Samukawa

JOURNAL OF PHYSICS D-APPLIED PHYSICS 46(41) 2013年10月
Low-damage silicon etching using a neutral beam

Kazuhiro Miwa, Yuki Nishimori, Shinji Ueki, Masakazu Sugiyama, Tomohiro Kubota, Seiji Samukawa

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 31(5) 2013年9月
Effect of neutral beam etching on mechanical property of microcantilevers

Yuki Nishimori, Shinji Ueki, Kazuhiro Miwa, Tomohiro Kubota, Masakazu Sugiyama, Seiji Samukawa, Gen Hashiguchi

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 31(2) 2013年3月
3-Dimensional and Damage-free Neutral Beam Etching for MEMS Applications

Akira Wada, Tomohiro Kubota, Yuuki Yanagisawa, Batnasan Altansukh, Seiji Samukawa, Tatahito Ono, Kazuhiro Miwa

2012 IEEE SENSORS PROCEEDINGS 1190-1192 2012年
Modification of Fluorinated Al2O3 Surface by Irradiating H-2 and O-2 Plasmas

Kazuhiro Miwa, Kenji Usami, Noriharu Takada, Koichi Sasaki

JAPANESE JOURNAL OF APPLIED PHYSICS 48(12) 2009年12月
Fluorination mechanisms of Al2O3 and Y2O3 surfaces irradiated by high-density CF4/O-2 and SF6/O-2 plasmas

Kazuhiro Miwa, Noriharu Takada, Koichi Sasaki

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 27(4) 831-835 2009年7月
Particle reduction using Y2O3 material in an etching tool

Kazuhiro Miwa, Takafumi Sawai, Masaaki Aoyama, Fumihiko Inoue, Akira Oikawa, Kazunori Imaoka

ISSM 2007: 2007 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, CONFERENCE PROCEEDINGS 479-482 2007年

MISC

Low-damage silicon etching using a neutral beam

Kazuhiro Miwa, Yuki Nishimori, Shinji Ueki, Masakazu Sugiyama, Tomohiro Kubota, Seiji Samukawa

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 31(5) 2013年9月
Modification of Fluorinated Al2O3 Surface by Irradiating H-2 and O-2 Plasmas

Kazuhiro Miwa, Kenji Usami, Noriharu Takada, Koichi Sasaki

JAPANESE JOURNAL OF APPLIED PHYSICS 48(12) 126002- 2009年12月
Fluorination mechanisms of Al2O3 and Y2O3 surfaces irradiated by high-density CF4/O-2 and SF6/O-2 plasmas

Kazuhiro Miwa, Noriharu Takada, Koichi Sasaki

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 27(4) 831-835 2009年7月
Reduction of Fluorinated Al2O3 by irradiating high-density H2 and O2 Plasmas

K. Miwa, N. Takada, K. Sasaki

Proceedings of the International Symposium on Dry Process -19 2009年
Differences in Al2O3 and Y2O3 surfaces irradiated by high-density CF4/O2 and SF6/O2 Plasmas

K. Miwa, N. Takada, K. Sasaki

Proceedings of International Conference on Plasma Nanotechnology and Science P-30- 2008年
Fluorination mechanisms of Al2O3 and Y2O3 surfaces by irradiations of high-density CF4/O2 and SF6/O2 Plasmas

K. Miwa, N. Takada, K. Sasaki

Abstracts of the 55th AVS International Symposium PS1-WeA8 -141 2008年
Fluorination of Al2O3 and Y2O3 surfaces by irradiating high-density CF4/O2 and SF6/O2 Plasmas

K. Miwa, N. Takada, K. Sasaki

Proceedings of the International Symposium on Dry Process -141 2008年
Differences in Al2O3 and Y2O3 surfaces irradiated by high-density CF4/O2 and SF6/O2 Plasmas

K. Miwa, N. Takada, K. Sasaki

Proceedings of International Conference on Plasma Nanotechnology and Science P-30- 2008年
Particle Reduction in an Etching Tool using Y2O3

K. Miwa, T. Sawai, M. Aoyama, F. Inoue, A. Oikawa, K. Imaoka

Proceedings of IEEE International Symposium on Semiconductor Manufacturing PO-O-210 479- 2007年
Irradiation of a high-density CF4/O2 plasma onto Al2O3 and Y2O3 surfaces

K. Miwa, N. Takada, K. Sasaki

Proceedings of International Symposium on Dry Process 159- 2007年
Particle reduction using Y2O3 material in an etching tool

Kazuhiro Miwa, Takafumi Sawai, Masaaki Aoyama, Fumihiko Inoue, Akira Oikawa, Kazunori Imaoka

ISSM 2007: 2007 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, CONFERENCE PROCEEDINGS PO-O-210 479-482 2007年
Reduction of depth variation in an Si etching process by applying an optimized run-to-run control system

K Miwa, T Inokuchi, T Takahashi, A Oikawa, K Imaoka

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 18(4) 517-521 2005年11月
A multivariate statistical analysis of tool parameters to improve an erase failure of a flash memory device

K Miwa, K Watanabe, K Takeishi, T Kobayashi, K Imaoka

ISSM 2005: IEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings PC174 132-135 2005年
Reduction of Depth Variation in a Si Etching Process by Applying an Optimized Run-to-Run Control System

K. Miwa, T. Inokuchi, T. Takahashi, A. Oikawa, K. Imaoka

Proceedings of IEEE International Symposium on Semiconductor Manufacturing PC02 269-272 2004年
In-situ Quantification of Deposition Amount in a poly-Si Etch Chamber using Optical Emission Spectroscopy of Etching Plasmas

K. Miwa, Y. Kawabata, T. Kobayashi, K. Imaoka

Proceedings of IEEE International Symposium on Semiconductor Manufacturing PC03 95-97 2003年
Influences of reaction products on etch rates and linewidths in a poly-Si/oxide etching process using HBr/O-2 based inductively coupled plasma

K Miwa, T Mukai

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 20(5) 2120-2125 2002年9月
Real-time Monitoring of a Plasma Etching Process and Etcher Conditions by Measuring Electrical Parameters of Discharges

K. Miwa, M. Aoyama, M. Kosugi

Proceedings of IEEE International Symposium on Semiconductor Manufacturing PE04 35-38 2002年
A Drift of Selectivity depending on Chamber Seasonings in a Poly-Si/Oxide Etching Process using Inductively Coupled Plasma

K. Miwa, T. Mukai, M. Nakaishi

Abstracts of the 47th AVS International Symposium PS2-Mo4 -26 2000年
Carbon contamination in an etching reactor using electron cyclotron resonance plasma and the effect of a N-2 addition

K Miwa, M Aoyama, K Higuchi, M Inoue, H Kojiri, K Nagase

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 15(3) 1413-1417 1997年5月
Carbon Contamination in an Etching Reactor using Electron Cyclotron Resonance Plasma and an Effect of N2 Addition

K. Miwa, K. Higuchi, M. Aoyama, M. Inoue

Abstracts of the 43rd AVS International Symposium MS-ThA10 -184 1996年

書籍等出版物

ULSI製造における汚染の実態

リアライズ理工センター 1997年 (ISBN: 9784898080177)
The Status Quo of Contamination in ULSI Manufacturing

リアライズ理工センター 1997年 (ISBN: 9784898080177)

所属学協会

応用物理学会

共同研究・競争的資金等の研究課題

マイクロ・ナノデバイス

その他の試験研究機関 1989年 - 1989年
Micro-nano devices

0113 (Japanese Only) 1989年 - 1989年

三輪和弘

基本情報

研究分野

経歴

学歴

論文

MISC

書籍等出版物

所属学協会

共同研究・競争的資金等の研究課題

メニュー

共著者の一覧