論文

2003年5月5日

Effect of low-temperature annealing on (Ga,Mn)As trilayer structures

Applied Physics Letters
  • D. Chiba
  • ,
  • K. Takamura
  • ,
  • F. Matsukura
  • ,
  • H. Ohno

82
18
開始ページ
3020
終了ページ
3022
記述言語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.1571666

The effect of low-temperature annealing on (Ga,Mn)As trilayer structures was investigated. The annealing was done at 250-280 °C in air and the temperature dependence of the magnetic moment was measured as a function of annealing time. The annealing time and thickness dependence of TC suggested that diffusion process from the surface is involved in the modification of the properties of the film by annealing.

リンク情報
DOI
https://doi.org/10.1063/1.1571666
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0038576285&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0038576285&origin=inward
ID情報
  • DOI : 10.1063/1.1571666
  • ISSN : 0003-6951
  • SCOPUS ID : 0038576285

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