2003年5月5日
Effect of low-temperature annealing on (Ga,Mn)As trilayer structures
Applied Physics Letters
- ,
- ,
- ,
- 巻
- 82
- 号
- 18
- 開始ページ
- 3020
- 終了ページ
- 3022
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.1571666
The effect of low-temperature annealing on (Ga,Mn)As trilayer structures was investigated. The annealing was done at 250-280 °C in air and the temperature dependence of the magnetic moment was measured as a function of annealing time. The annealing time and thickness dependence of TC suggested that diffusion process from the surface is involved in the modification of the properties of the film by annealing.
- リンク情報
- ID情報
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- DOI : 10.1063/1.1571666
- ISSN : 0003-6951
- SCOPUS ID : 0038576285