2002年10月7日
Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy
Applied Physics Letters
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- 巻
- 81
- 号
- 15
- 開始ページ
- 2800
- 終了ページ
- 2802
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.1512953
Using cross-sectional scanning tunneling microscopy (STM), we have investigated the local electronic properties of molecular-beam epitaxy grown GaMnAs layers on a p-GaAs substrate. The STM image shows light and dark areas with the average size on the order of nm. From conductance spectra measured with the STM, the bandgap of the GaMnAs is estimated to be 1.23±0.05eV. An apparent conductance within the bandgap indicates the presence of hole states in the valence band, which are induced by Mn acceptors. A conductance peak at 0.7 eV above the valence band edge can be identified with electron tunneling into the ionization levels of As antisites. © 2002 American Institute of Physics. © 2002 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.1512953
- ISSN : 0003-6951
- SCOPUS ID : 79956039534