Matys Maciej (Maciej Matys) - マイポータル

基本情報

所属: Fujitsu Laboratories ltd., Atsugi

学位: Ph.D. in Physics(University of Silesia)

J-GLOBAL ID: 201401050622372563
researchmap会員ID: B000242690

外部リンク: https://www.fujitsu.com

研究キーワード

研究分野

自然科学一般 / 半導体、光物性、原子物理 /

学歴

2009年 - 2014年

Ph.D. in Physics, University of Silesia in Katowice, 2014
2012年10月 - 2013年6月

Postgraduate studies in Nuclear Power Engineering / Nuclear Power Plant Security Systems ,Warsaw University of Technology
2004年10月 - 2009年6月

M.Sc. in Physics, AGH University of Science and Technology 2009

経歴

2023年4月 - 現在

Fujitsu Laboratories ltd., Atsugi
2019年2月 - 2023年3月

Nagoya University Institute of Materials and Systems for Sustainability, Assistant Professor
2017年10月 - 2019年1月

Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Specially Appointed Assistant Professor
2014年10月 - 2017年10月

Postdoctoral Fellow, Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
2008年 - 2010年

AGH University of Science and Technology in Cracow: Lecture in Number Theory and Cryptography

受賞

2017年

Editor’s Pick, Journal of Applied Physics, 2017.

Maciej Matys, Boguslawa Adamowicz
2013年5月

Project NCN PRELUDIUM 2013

Maciek Matys
2012年7月

Best Paper Award Nomination, International Conference on the Physics of Semiconductors Zurich, Switzerland

Maciej Matys

共同研究・競争的資金等の研究課題

Mg-implanted Vertical GaN Junction Barrier Schottky Rectifiers

2020年1月 - 2023年4月

prof. Tetsu Kachi
Mg implanted edge termination structure for GaN power device applications

Nagoya University

Tetsu Kachi
Innovative technologies of multifunctional materials and structures for nanoelectronics,photonics, spintronics, and sensor structures (InTechFun)

http, science, com, pape
Highly Safe GaN Metal-Oxide-Semiconductor Transistor Switch

Visegrad Group (V4)-Japan Joint Research Program

http, www.safemost.sav.sk

所属学協会

その他

Languages

Polish - First language English - Fluent written and spoken German - Intermediate (speaking, reading); basic (writing) Japanese- Beginner Level
Journal Referee

Nanotechnology, Japanese Journal of Applied Physics, Journal of Physics D Applied Physics, Central European Journal of Physics, Journal of Applied Physics, Applied Surface Science, physica status solidi (a), Applied Physics Letters, Applied Physics Express

論文

Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation

Maciej Matys, Kazuki Kitagawa, Tetsuo Narita, Tsutomu Uesugi, Michal Bockowski, Jun Suda, Tetsu Kachi

Japanese Journal of Applied Physics 62 SN0801 2023年9月査読有り招待有り筆頭著者
Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage

Maciej Matys, Kazuki Kitagawa, Tetsuo Narita, Tsutomu Uesugi, Jun Suda, Tetsu Kachi

121(20) 2022年11月査読有り筆頭著者
Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Tetsu Kachi, Tetsuo Narita, Hideki Sakurai, Maciej Matys, Keita Kataoka, Kazufumi Hirukawa, Kensuke Sumida, Masahiro Horita, Nobuyuki Ikarashi, Kacper Sierakowski …

132(13) 2022年10月査読有り招待有り
Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex-situ regrown AlGaN layer

Ali Baratov, Shinsaku Kawabata, Shun Urano, Itsuki Nagase, Masaki Ishiguro, Shogo Maeda, Takahiro Igarashi, Toi Nezu, Zenji Yatabe, Maciej Matys …

Applied Physics Express 15(10)-5 2022年3月査読有り
Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings

Maciej Matys, Takashi Ishida, Kyung Pil Nam, Hideki Sakurai, Keita Kataoka, Tetsuo Narita, Tsutomu Uesugi, Michal Bockowski, Tomoaki Nishimura, Jun Suda

Applied Physics Express 14(7) 074002 2021年6月査読有り筆頭著者
Mg-implanted bevel edge termination structure for GaN power device applications

Maciej Matys, Takashi Ishida, Kyung Pil Nam, Hideki Sakurai, Tetsuo Narita, Tsutomu Uesugi, Michal Bockowski, Jun Suda, Tetsu Kachi

Applied Physics Letters 118(9) 093502 2021年3月査読有り筆頭著者
Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment (Featured article in Compound Semiconductor Magazine January 2021 Volume 27 Issue 1 p. 56)

Takashi Ishida, Kyung Pil Nam, Maciej Matys, Tsutomu Uesugi, Jun Suda, Tetsu Kachi

Applied Physics Express 13 124003 2020年11月査読有り
All-optical transistor using deep-level defects in nitride semiconductors for room temperature optical computing

M. Matys, A. Domanowska, A. Michalewicz, T. Kachi

AIP Advances Accepted for publication 2020年10月査読有り
Effect of carrier drift-diffusion transport process on thermal quenching of Photoluminescence in GaN

M. Matys, B. Adamowicz, T. Kachi, T. Hashizume

Journal of Physics D Applied Physics Accepted for publication 2020年10月査読有り筆頭著者責任著者
Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors

M.Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik, T. Hashizume

Journal of Applied Physics 124(22) 224502 2018年12月査読有り
On the interpretation of cathodoluminescence intensity maps of wide band gap nanowires

M Matys, B Adamowicz

Nanotechnology 30(3) 035703 2018年11月査読有り
Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

M. Matys, S. Kaneki, K. Nishiguchi, B. Adamowicz, T. Hashizume

JOURNAL OF APPLIED PHYSICS 122(22) 224504 2017年12月査読有り
Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

M. Matys, R. Stoklas, M. Blaho, B. Adamowicz

APPLIED PHYSICS LETTERS 110(24) 243505 2017年6月査読有り
Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

R. Stoklas, D. Gregusova, M. Blaho, K. Froehlich, J. Novak, M. Matys, Z. Yatabe, P. Kordos, T. Hashizume

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32(4) 045018-1-045018- 2017年4月査読有り
Mechanism of yellow luminescence in GaN at room temperature

M. Matys, B. Adamowicz

JOURNAL OF APPLIED PHYSICS 121(6) 065104 2017年2月査読有り
On the origin of interface states at oxide/III-nitride heterojunction interfaces

M. Matys, B. Adamowicz, A. Domanowska, A. Michalewicz, R. Stoklas, M. Akazawa, Z. Yatabe, T. Hashizume

JOURNAL OF APPLIED PHYSICS 120(22) 225305 2016年12月査読有り
58

High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

M. Matys, B. Adamowicz, Z. R. Zytkiewicz, A. Taube, R. Kruszka, A. Piotrowska

APPLIED PHYSICS LETTERS 109(5) 051106 2016年8月査読有り
58

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

M. Matys, R. Stoklas, J. Kuzmik, B. Adamowicz, Z. Yatabe, T. Hashizume

JOURNAL OF APPLIED PHYSICS 119(20) 205304 2016年5月査読有り
113

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method

M. Matys, B. Adamowicz, Y. Hori, T. Hashizume

APPLIED PHYSICS LETTERS 103(2) 2013年7月査読有り
A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/GaN structures from capacitance - voltage and photocapacitance - light intensity measurements

Maciej Matys, Boguslawa Adamowicz, Tamotsu Hashizume

PHYSICS OF SEMICONDUCTORS 1566 57-+ 2013年査読有り

もっとみる

講演・口頭発表等

Design and Fabrication of Vertical GaN Junction Barrier Schottky Diodes Using Selective Ion Implantation Technology

Maciej Matys, Kazuki Kitagawa, Tsutomu Uesugi, Jun Suda, Tetsu Kachi

15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 16th International Conference on Plasma-Nano Technology & Science (ISPlasma2023/IC-PLANTS2023）March 05 - March 09, 2023 2023年3月6日招待有り
Recent development of GaN Power switching devices with Ion Implantation technology

Tetsu Kachi, Hideki Sakurai, Tetsuo Narita, Maciej Matys, Jun Suda

SPIE Photonics West 2023, San Francisco, California, United States 2023年1月28日招待有り
Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability

Maciej Matys, Kazuki Kitagawa, Tsutomu Uesugi, Jun Suda, Tetsu Kachi

International Workshop on Nitride Semiconductors 2022, Berlin 2022年10月11日
Analysis of temperature dependent frequency dispersion in C-V curves of Al2O3/AlGaN/GaN structures based on the disorder-induced gap-state model

M. Matys, S. Kaneki, B. Adamowicz, J. Kuzmik, T. Hashizume

12th Topical Workshop on Heterostructure Microelectronics Kirishima, Kyushuu, Japan 2017年8月28日
Characterization of Interface States from Frequency Dispersion in Capacitance-Voltage Curves of Al2O3/AlGaN/GaN Heterostructures

M. Matys, S.Kaneki, B.Adamowicz, J.Kuzmik, T.Hashizume

International Workshop on Nitride Semiconductors (IWN 2016) 2 Aug 2016 Orlando, Florida 2016年10月2日
Frequency dispersion in capacitance-voltage characteristics of Al2O3/AlGaN/GaN heterostructures

M. Matys, S. Kaneki, B. Adamowicz, J. Kuzmik, T. Hashizume

2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Hakodate, Japan 2016年7月4日
Nature and origin of interface states at dielectric/III-N heterojunction interfaces

Maciej Matys, Boguslawa Adamowicz, Roman Stoklas, Masamichi Akazawa, Zenji Yatabe, Tamotsu Hashizume

2015 MRS Fall Meeting & Exhibit 3 Dec 2015 Materials Research Society Boston 2015年12月3日
Influence of the Oxygen-Plasma Treatment on the AlGaN/GaN MOSHFETs with HfO2 by ALD to Reduce Leakage Current

Roman Stoklas, Dagmar Gregušová, Michal Blaho, Karol Fröhlich, Jozef Novák, Peter Kordoš, Maciek Matys, Zenji Yatabe, Tamotsu Hashizume

2015 Compound Semiconductor Week (CSW 2015) 29 Jun 2015 UCSB, MIT 2015年6月29日
Study of the density distribution and capture cross section of interface states and interface fixed charge at Al2O3/GaN and Al2O3/AlGaN interfaces

M. Matys, Z. Yatabe, Y. Hori, T. Hashizume, B. Adamowicz

International Workshop on Nitride Semiconductors (IWN 2014) 27 Aug 2014 2014年8月27日
Characterization of donor-like states at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN structures,

M. Matys, B. Adamowicz, Y. Hori, T. Hashizume

15th International Conference on Defects Recognition, Imaging and Physics in Semiconductors DRIP XV, September 15-19, 2013, Warsaw, Poland 2013年9月15日
Electronic states at passivated GaN, AlGaN and SiC surfaces,

B. Adamowicz, M. Matys, A. Domanowska, A. Taube, T. Hashizume

V Congress of the Polish Surface Society, September 12 { 15, 2013, Krakow 2013年9月12日
Study of the surface photovoltage for passivated GaN surfaces

M. Matys, B. Adamowicz, Z.R. Z_ ytkiewicz, R. Kruszka, A. Taube, A. Piotrowska

VIII Int. Workshop on Semiconductor Surface Passivation, September, 8 { 12, 2013, Krakow, Poland 2013年9月8日
Study of the density distribution of the donor interface states for Al2O3/AlGaN/GaN heterostructure using frequency photocapacitance method,

M. Matys, B. Adamowicz, Y. Hori, T. Hashizume

10th Topical Workshop on Heterostructure Microelectronics, September 2-5, 2013, Hakodate, Japan 2013年9月2日
Determining the energy distribution of interface states at Al2O3/GaN and Al2O3/AlGaN interfaces,

M. Matys, R. Ucka, B. Adamowicz, Y. Hori, T. Hashizume

2013年6月10日
UV photodetector based on metal/insulator/GaN and AlGaN/GaN structures

B. Adamowicz, M. Matys, R. Ucka, A. Domanowska, Z. R. Zytkiewicz, M. Soba, nska, K. K losek, A. Taube, R. Kruszka

2013年6月10日
Studies of surface photovoltage in metal/insulator/n-GaN structures, 9th International Conference on Advanced Semiconductor Devices and Microsystems,

R. Ucka, M. Matys, B. Adamowicz, T. Hashizume

9th International Conference on Advanced Semiconductor Devices and Microsystems, November 11{15, 2012, Smolenice, Slovakia 2012年11月11日
Determination of the interface state density distribution at the insulator/AlGaN interface in metal/insulator/AlGaN/- GaN structures

M. Matys, R. Ucka, B. Adamowicz, T. Hashizume

9th International Conference on Advanced Semiconductor Devices and Microsystems, November 11{15, 2012, Smolenice, Slovakia 2012年11月11日
Two-dimensional modeling of gated photoluminescence in metal/insulator/n-GaN structures with cylindrical symmetry,

B. Adamowicz, M. Matys, T. Hashizume

Int. Workshop on Nitride Semiconductors, October 14 { 19, 2012, Sapporo, Japan 2012年10月14日
A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/ GaN structures from capacitance -voltage and photocapacitance - light intensity measurements

M. Matys, M. Miczek, B. Adamowicz, T. Hashizume

31st International Conference on the Physics of Semiconductors, July 29th - August 3rd, 2012, Zurich, Switzerland 2012年7月31日
Characterization of chemical, optical and electronic properties of in-situ passivated n-GaN surface

B. Adamowicz, A. Domanowska, P. Ko, scielniak, R. Ucka, M. Matys, M. Miczek, M. Sitarz, J. Szuber, Z.R. Z_ ytkiewicz, M. Soban ska, K. K losek, A. Taube, J. Zywicki

XI National Conference on Electronics, June 11 -14, 2012, Dar lowko Wschodnie 2012年6月11日

もっとみる

産業財産権

0000 Mg implanted bevel edge termination structure for GaN power device applications

T.Ishida M. Matys, T. Kachi

Matys Maciej

基本情報

研究キーワード

研究分野

学歴

経歴

受賞

共同研究・競争的資金等の研究課題

所属学協会

その他

論文

講演・口頭発表等

産業財産権

メニュー

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