Mamoru Furuta - My portal

Profile Information

Affiliation: School of Environmental Science and Engineering, Kochi University of Technology
: (Concurrent)

Degree: 博士（工学）(奈良先端科学技術大学院大学)

Researcher number: 20412439
ORCID ID: https://orcid.org/0000-0003-1685-3246
J-GLOBAL ID: 200901025943871540
researchmap Member ID: 5000100867

External link: http://www.env.kochi-tech.ac.jp/m-furuta/

教員紹介のページ（高知工科大学）
https://www.kochi-tech.ac.jp/profile/ja/furuta-mamoru.html

研究内容紹介（The power of KUT）
https://www.kochi-tech.ac.jp/power/research/post_26.html

研究室HP
http://www.env.kochi-tech.ac.jp/m-furuta/

IEEE Senior member

Major Research Interests

Research Areas

Research History

Apr, 2020 - Present

Kochi University of Technology
Aug, 2018 - Present

Professor, Environmental Science and Engineering, Kochi University of Technology
Jan, 2011 - Jul, 2018

Professor, Environmental Science and Engineering, Kochi University of Technology
Apr, 2008 - Dec, 2010

Associate Professor, Research Institute, Kochi University of Technology
Apr, 2005 - Mar, 2008

Associate Professor, Research Institute, Kochi University of Technology
Apr, 2003 - Mar, 2005

生産技術センター主務, Toshiba Matsushita Display Technology Co. Ltd.
Apr, 1996 - Mar, 2003

主任技師, 液晶事業部開発部, Matsushita Electric Industry Co. Ltd.
Apr, 1988 - Mar, 1996

松下電器産業(株) 中央研究所

Education

Apr, 2002 - Mar, 2003

Nara Institute Science and Technology
Apr, 1986 - Mar, 1988

The University of Electro-Communications
Apr, 1984 - Mar, 1986

The University of Electro-Communications
Apr, 1979 - Mar, 1984

Osaka Prefecture University College of Technology

Awards

Mar, 2021

Special Recognition Award, Society for Information Display (SID)
Mar, 2018

APEX/JJAP Editorial Contribution Award, 応用物理学会

FURUTA Mamoru
Dec, 2016

Outstanding Poster Award, Low-temperature Processed Self-Alighned InGaZnO Hybrid Thin-Film Transistor with an Organic Gate Insulator, International Display Workshops (IDW ’16)

FURUTA Mamoru
Dec, 2013

Outstanding Poster Award, High mobility atmospheric pressure processed IGZO TFT with AlOx/IGZO stack fabricated by mist-CVD, International Display Workshops (IDW ’13)

FURUTA Mamoru
Jul, 2013

Overall Poster Award, High mobility IGZO TFT fabricated by solution-based non-vacuum mist-CVD, Semiconductor Technology for ULSI and TFTs IV (2013)

FURUTA Mamoru
May, 2011

丹羽高柳論文賞, 映像情報メディア学会
Dec, 2006

Outstanding Poster Award, Low-Temperature Synthesis of SIO2 Insulator by ICP-CVD using Tetramethylsilane, International Display Workshops (IDW ’06)

FURUTA Mamoru
May, 2006

Distinguished Paper Award, High Mobility Top-Gate ZnO TFTs for Active-Matrix Liquid Crystal Displays, Society for Information Display(SID2006)

FURUTA Mamoru

Committee Memberships

Apr, 2019 - Present

編集委員, Materials (MDPI)
Jan, 2018 - Present

プログラム委員, International Thin-Film Transistor Conference
Apr, 2016 - Present

APEX/JJAP編集委員, 応用物理学会
Apr, 2014 - Present

プログラム委員, International Conference on Solid State Devices and Materials (SSDM)
Apr, 2009 - Present

プログラム委員, International Workshop on Active-Matrix Flatpanel Display (AM-FPD)
Apr, 2005 - Present

組織委員, 薄膜材料デバイス研究会
Oct, 2019 - Oct, 2021

エリア10 チェア, 国際会議SSDM
Apr, 2016 - Mar, 2018

機関誌「応用物理」編集委員, 応用物理学会
Sep, 2013 - Aug, 2017

中国四国支部代議員, 応用物理学会

Professional Memberships

Research Projects

水素による透明金属酸化インジウムの半導体転移と固相結晶化フレキシブルトランジスタ

科学研究費助成事業, 基盤研究(C), 日本学術振興会, Apr, 2022 - Mar, 2025

古田守
フレキシブル透明回路を実装した三層積層式色分離型イメージセンサの創成

科研費基盤研究(C), 日本学術振興会, Apr, 2016 - Mar, 2019

古田守
酸化亜鉛透明トランジスタと積層式色分離型光電変換素子からなる光デバイスの創成

科研費基盤研究(C), 日本学術振興会, Apr, 2011 - Mar, 2014

古田守
アイデアスカウト(IS), 半導体理工学研究センター(STARC)

Apr, 2011 - Mar, 2013

古田守
新しい透明スイッチング素子の開発

研究成果最適展開支援事業A-STEP(探索タイプ), 科学技術振興機構(JST), Apr, 2010 - Mar, 2011

古田守
次世代薄膜トランジスタ実現に向けた大面積基板対応ナノ結晶シリコン製膜プロセス・装置化技術の開発

研究成果最適展開支援事業A-STEP(フィージビリティースタディー), 科学技術振興機構(JST), Apr, 2009 - Mar, 2011

古田守
酸化亜鉛(ZnO)高配向・高品質多結晶薄膜形成の手法とその薄膜トランジスタ応用に関する研究

研究助成, 池谷科学技術振興財団, Apr, 2009 - Mar, 2010

古田守
酸化亜鉛(ZnO)紫外センサーの事業化と低コストプロセスの開発

高知県地域研究成果事業化支援事業, 高知県, Dec, 2007 - Mar, 2010

古田守
触媒微細制御による多結晶シリコン膜の結晶核密度制御と高品質・低温形成

シーズ発掘試験, 科学技術振興機構(JST), Apr, 2007 - Mar, 2008

古田守

Papers

149

High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors

Yusaku Magari, Taiki Kataoka, Wenchang Yeh, Mamoru Furuta

Nature Communications, 13(1), Dec, 2022
Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H)

Yusaku Magari, Wenchang Yeh, Toshiaki Ina, Mamoru Furuta

Nanomaterials, 12(17) 2958-2958, Aug 26, 2022
Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications

Rostislav Velichko, Yusaku Magari, Furuta Mamoru

Materials, 15(1) 334-334, Jan, 2022
Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO_x:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

Taiki Kataoka, Yusaku Magari, Hisao Makino, Furuta Mamoru

Materials, 15(1) 187-187, Dec, 2021
Impact of organic inter-layer dielectric for improvement in mechanical flexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor

Hyo-Eun Kim, Hye-Won Jang, Mamoru Furuta, Jeonghan Yoon, Saeroonter Oh, Sung-Min Yoon

Organic Electronics, 96 106223-106223, Sep, 2021 Peer-reviewed
7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization

Mamoru Furuta, Kenta Shimpo, Taiki Kataoka, Daiki Tanaka, Toshihiro Matsumura, Yusaku Magari, Rostislav Velichko, Daichi Sasaki, Emi Kawashima, Yuki Tsuruma

SID Symposium Digest of Technical Papers, 52(1) 69-72, May, 2021
P‐12: Activation of IGZO Devices at 150°C via Reduction Process Using Hydrogen Gas During Sputtering

Yusaku Magari, S G Mehadi Aman, Daichi Sasaki, Mamoru Furuta

SID Symposium Digest of Technical Papers, 52(1) 1096-1099, May, 2021
Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices

Syuya Kono, Yusaku Magari, Marin Mori, S. G. Mehadi Aman, Norbert Fruehauf, Hiroshi Furuta, Mamoru Furuta

Japanese Journal of Applied Physics, 60(SB) SBBM05-SBBM05, May 1, 2021 Peer-reviewedCorresponding author
Effects of water and hydrogen introduction during In–Ga–Zn–O sputtering on the performance of low-temperature processed thin-film transistors

Yusaku Magari, Mamoru Furura

Japanese Journal of Applied Physics, 60(SB) SBBM04-SBBM04, May 1, 2021 Peer-reviewedCorresponding author
Investigation of the effect of adding a moderate amount of hydrogen on the properties of tin oxide films deposited by DC magnetron sputtering

Rostislav Velichko, Yusaku Magari, Hisao Makino, Mamoru Furuta

JAPANESE JOURNAL OF APPLIED PHYSICS, 60(5), May, 2021 Peer-reviewedCorresponding author
Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

Yusaku Magari, S. G. Mehadi Aman, Daichi Koretomo, Kentaro Masuda, Kenta Shimpo, Hisao Makino, Mutsumi Kimura, Mamoru Furuta

ACS Applied Materials & Interfaces, 12(42) 47739-47746, Oct 21, 2020 Peer-reviewedLast author
Low-Temperature Processed Metal-Semiconductor Field-Effect Transistor with In–Ga–Zn–O Channel Deposited by Ar+O2+H2 Sputtering

Yusaku Magari, Mamoru Furuta

ECS Transactions, 98(7) 89-95, Sep 23, 2020
Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors

Dapeng Wang, Mamoru Furuta, Shigekazu Tomai, Koki Yano

NANOMATERIALS, 10(9), Sep, 2020 Peer-reviewed
Surface and bulk electronic states in hydrogenated In-Ga-Zn-O films

Magari Yusaku, Masuda Kentaro, Makino Hisao, Furuta Mamoru

JSAP Annual Meetings Extended Abstracts, 2020.2 2378-2378, Aug 26, 2020
Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material

Daichi Koretomo, Shuhei Hamada, Marin Mori, Yusaku Magari, Mamoru Furuta

Applied Physics Express, 13(7) 076501-076501, Jul 1, 2020 Peer-reviewedCorresponding author
Origin of work function engineering of silver oxide for an In–Ga–Zn–O Schottky diode

Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Mamoru Furuta

Applied Surface Science, 512 144519-144519, May, 2020 Peer-reviewedCorresponding author
Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

Daichi Koretomo, Shuhei Hamada, Yusaku Magari, Mamoru Furuta

Materials, 13(8) 1935-1935, Apr 20, 2020 Peer-reviewedCorresponding author
Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel

Yusaku Magari, S G Mehadi Aman, Daichi Koretomo, Kentaro Masuda, Kenta Shimpo, Mamoru Furura

Japanese Journal of Applied Physics, 59(SG) SGGJ04-SGGJ04, Apr 1, 2020 Peer-reviewedCorresponding author
Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses

Dapeng Wang, Mamoru Furuta, Shigekazu Tomai, Koki Yano

NANOMATERIALS, 10(4), Apr, 2020 Peer-reviewed
A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors

Hyo-Eun Kim, Mamoru Furuta, Sung-Min Yoon

IEEE Electron Device Letters, 41(3) 393-396, Mar, 2020 Peer-reviewed

Presentations

High Mobility Hydrogenated Polycrystalline In–Ga–O (IGO:H) Thin-Film Transistors formed by Solid Phase Crystallization

Mamoru Furuta, Kenta Shimpo, Taiki Kataoka, Daiki Tanaka, Toshihiro Matsumura, Yusaku Magari, Rostislav Velichko, Daichi Sasaki, Emi Kawashima, Yuki Tsuruma

Society for Information Display (2021), Aug 17, 2021
Heterojunction Channel Engineering for Oxide Thin-Film Transistors

Mamoru Furuta

The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE2020), Nov 3, 2020 Invited
Heterojunction Channel Engineering for in-Ga-Zn-O Thin-Film Transistors

Mamoru Furuta

Electrochemical Socierty (ECS PRiME2020), Oct 6, 2020 Invited
TFTs for Active Matrix: from Silicon to Oxides and New materials

Mamoru FURUTA

3rd International Conference on Consumer Electronics and Device (ICCED 2019), Jun 14, 2019 Invited
Carrier transport and bias stress stability of IGZO TFT with heterojunction channel

Mamoru Furuta

7th International Conference on Semiconductor Technology for ULSI and TFTs, May 20, 2019 Invited
Low-temperature Processed InGaZnOx TFT with an Organic Gate Insulator

FURUTA Mamoru

5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018), Nov 14, 2018 Invited
ヘテロ接合チャネルIGZO TFTの特性・信頼性

古田守

第2回酸化物半導体討論会, Oct 26, 2018 Invited
Low-temperature activation of Ar+O2+H2 sputtered In–Ga–Zn–O film followed by thermal annealing

FURUTA Mamoru

7th International Symposium on Transparent on Conductive Materials (TCM2018), Oct 17, 2018 Invited
Low-temperature activation method for InGaZnOx thin-film transistors

FURUTA Mamoru

ECS and SMEQ Joint International Meeting, Oct 3, 2018 Invited
フレキシブルデバイスに向けた酸化物薄膜トランジスタの低温プロセス

古田守

第 79 回応用物理学会秋季学術講演会, Sep 20, 2018 Invited
Mobility enhancement of InGaZnOx thin-film transistor by hetero-channel with a different composition

FURUTA Mamoru

International Conference on Solid State Devices and Materials (SSDM2018), Sep 12, 2018
酸化物半導体InGaZnOx薄膜トランジスタの特性制御

FURUTA Mamoru

シリコン材料・デバイス研究会（SDM）, Apr 7, 2018 Invited

Books and Other Publications

酸化亜鉛の最先端技術と将来

古田守 (Role: Contributor)

Jan, 2011
薄膜トランジスタ

古田守 (Role: Contributor)

コロナ社, Nov, 2008
薄膜ハンドブック

古田守 (Role: Contributor)

オーム社, Mar, 2008
低温ポリシリコン薄膜トランジスタの開発―システムオンパネルをめざして

古田守 (Role: Contributor)

シーエムシー出版, Mar, 2007

Misc.

144

Low-temperature synthesis of oxide semiconductors and their application to flexible devices

2021(1) 13-16, Nov 18, 2021
Effect of Deposition Temperature and Source Gas Chemistry in PE-CVD SiO<inf>2</inf> Passivation on InGaZnO TFTs

S. G.Mehadi Aman, Daichi Koretomo, Yusaku Magari, Mamoru Furuta

AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Aug 15, 2018
InGaZnOX/AgOx酸化物ヘテロSchottky界面の起源とフレキシブルデバイス応用—Origin of Schottky properties in InGaZnOx/AgOx hetero-interface and its application to flexible device—シリコン材料・デバイス

曲勇作, 牧野久雄, 橋本慎輔, 濵田賢一朗, 増田健太郎, 古田守

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 118(1) 33-36, Apr, 2018
Low-temperature (150 °C) processed self-aligned InGaZnO hybrid thin-film transistor with an organic gate insulator

Mamoru Furuta, Yvonne Krieg, Gengo Tatsuoka, S. G.Mehadi Aman, Yuya Hirota, Norbert Frühauf

23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, 4 2169-2170, Jan 1, 2018
時間的・空間的隔たり産み出すミスト流を用いた新反応制御技術の開発

川原村敏幸, DANG Giang T., LIU Li, PRADEEP E.K.C., 龍田宗孝, 古田守, 須和祐太, 佐藤翔太, 中曽根義晃, 山沖駿友 …

応用物理学会春季学術講演会講演予稿集(CD-ROM), 64th, 2017
Invited Talk : Low-temperature Processed Self-aligned InGaZnO Thin-Film Transistor for Flexible Device Applications

116(1) 53-56, Apr 8, 2016
Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors : Influence of carrier concentration in back-channel region

116(1) 57-60, Apr 8, 2016
Color Image Sensor with Three-stacked Organic Photoconductive Films

SAKAI Toshikatsu, SEO Hokuto, TAKAGI Tomomi, KUBOTA Misao, OHTAKE Hiroshi, FURUTA Mamoru

ITE Technical Report, 40(12) 49-52, Mar, 2016
Active-Matrix flatpanel displays and devices-TFT technologies and FPD materials

Susumu Horita, Mamoru Furuta, Reiji Hattori, Yasuaki Ishikawa

Japanese Journal of Applied Physics, 55(3), Mar 1, 2016
Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors

Mamoru Furuta, Jingxin Jiang, Mai Phi Hung, Tatsuya Toda, Dapeng Wang, Gengo Tatsuoka

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 5(3) Q88-Q91, 2016
Low-temperature processed metal-semiconductor field-effect transistor with In-GaZn-O/AgOx Schottky gate

Y. Magari, S. Hashimoto, K. Hamada, M. Furuta

THIN FILM TRANSISTORS 13 (TFT 13), 75(10) 139-144, 2016
Image sensor with organic photoconductive films by stacking red/green and blue components

T. Takagi, H. Seo, T. Sakai, H. Ohtake, M. Furuta

IS and T International Symposium on Electronic Imaging Science and Technology, 2016
Low-temperature (150°C) processed self-aligned InGaZnO hybrid thin-film transistor with an organic gate insulator

Mamoru Furuta, Yvonne Krieg, Gengo Tatsuoka, S. G. Mehadi Aman, Yuya Hirota, Norbert Frühauf

23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, 1 116-117, Jan 1, 2016
パルス電圧下における酸化物TFTの自己発熱による劣化現象についての考察

木瀬香保利, 藤井茉美, 山崎はるか, 浦川哲, 苫井重和, 矢野公規, WANG Dapeng, 古田守, 石河泰明, 浦岡行治

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 76th ROMBUNNO.15P-1B-12, Aug 31, 2015
Center for Nanotechnology, Research Institute Activity Report 2014

12(1) 139-153, Jul 31, 2015
ミストアニールによる二硫化モリブデン(MoS₂)層状膜作製への挑戦

佐藤翔太, 川原村敏幸, 古田守

応用物理学会春季学術講演会講演予稿集(CD-ROM), 62nd ROMBUNNO.14P-D7-9, Feb 26, 2015
C-9-9 Characterization of a Touch Panel Circuit using Oxide Semiconductor TFTs

Koga Yuuki, Matsuda Tokiyoshi, Furuta Mamoru, Kimura Mutsumi

Proceedings of the IEICE General Conference, 2015(2) 45-45, Feb 24, 2015
Doping and defect passivation in In-Ga-Zn-O by fluorine

M. Furuta, J. Jiang, G. Tatsuoka, D. Wang

ECS Transactions, 67(1) 41-49, 2015
Frequency Modulation-type Capacitance Sensor using Amorphous In-Ga-Zn-O Thin-Film Transistors

Yuki Koga, Tokiyoshi Matsuda, Mamoru Furuta, Mutsumi Kimura

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 139-140, 2015
Stable metal semiconductor field effect transistors on oxide semiconductor channels grown via Mist-CVD

G. T. Dang, T. Kawaharamura, M. Furuta, S. Saxena, M. W. Allen

Proceedings of the International Display Workshops, 1 587-590, Jan 1, 2015

Industrial Property Rights

168

特開2017-095743 ITO導電膜の成膜方法

川原村敏幸, 古田守, 山田茂男, 小川一幸
特許第6103633号オゾン支援による高品質均質金属酸化物薄膜作製技術、及び、該薄膜作製技術による酸化物薄膜トランジスタの製造方法

川原村敏幸, 古田守, 内田貴之, 眞田克
特開2016-072570 電子デバイス、その製造方法、及びその製造装置

里吉務, 石田寛, 佐々木和男, 古田守
特開2015-176885 半導体デバイス、その製造方法、及びその製造装置

里吉務, 古田守
特許第5793723号薄膜蛍光体及びその成膜方法

李朝陽, 松田時宜, 川原村敏幸, 古田守, 古田寛, 平松孝浩, 平尾孝
特開2014-154734 オゾン支援による高品質均質金属酸化物薄膜作製技術、及び、該薄膜作製技術による酸化物薄膜トランジスタ、及び、その製造方法

川原村敏幸, 古田守, 内田貴之, 眞田克
特許第5580102号多層カーボンナノチューブの集合構造の評価方法

平尾孝, 古田守, 古田寛, 川原村敏幸, 小向拓治, 下元温, 吉原久美子
特許第5565673号ミストエッチング装置及びミストエッチング方法

平尾孝, 川原村敏幸, 古田守, 平松孝浩
WO2013-108630 電界効果型トランジスタ

笘井重和, 矢野公規, 古田守
特許第5158809号電子放出素子

古田寛, 川原村敏幸, 古田守, 平尾孝
特許第5128792号薄膜トランジスタの製法

平尾孝, 古田守, 古田寛, 松田時宜, 平松孝浩
特許第5112668号半導体装置の製法

古田寛, 平松孝浩, 松田時宜, 古田守, 平尾孝
特許第5099739号薄膜トランジスタ及びその製法

古田守, 松田時宜, 平尾孝, 古田寛, 平松孝浩
特許第5099740号薄膜トランジスタ

古田守, 平尾孝, 古田寛, 松田時宜
特許第5015534号絶縁膜の成膜方法

古田寛, 平松孝浩, 松田時宜, 古田守, 平尾孝
特許第5015472号薄膜トランジスタ及びその製法

平尾孝, 古田守, 古田寛, 松田時宜, 平松孝浩
特許第5015471号薄膜トランジスタ及びその製法

平尾孝, 古田守, 古田寛, 松田時宜, 平松孝浩
特許第5015473号薄膜トランジスタアレイ及びその製法

古田守, 平尾孝, 古田寛, 松田時宜, 平松孝浩
特許第5015470号薄膜トランジスタ及びその製法

平尾孝, 古田守, 古田寛, 松田時宜, 平松孝浩
特開2012-099661 酸化物半導体の製造方法

古田守, 笘井重和, 矢野公規, 大山正嗣