論文

2019年8月

High Performance Coated Conductors Fabricated by UTOC-MOD Process

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
  • Teruo Izumi
  • ,
  • Koichi Nakaoka
  • ,
  • Michio Sato
  • ,
  • Takato Machi
  • ,
  • Akira Ibi
  • ,
  • Ryuji Yoshida
  • ,
  • Takeharu Kato
  • ,
  • Masashi Miura
  • ,
  • Takanobu Kiss
  • ,
  • Masayoshi Inoue

29
5
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1109/TASC.2019.2908241
出版者・発行元
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

A new metal organic deposition (MOD) process using precursor solution containing metal trifluoroacetates was developed to improve in-field performance. In this process, the pinning centers of BaMO3 (M: metal elements such as Zr and Hf) materials could be made to be finer by reducing the once coating thickness in the coating and calcination step. This is referred to as the ultrathin once coating (UTOC)-MOD process. This process improves the in-field performance. The UTOC-MOD process also has the advantage of uniformity of 2-dimensional J(c)-distribution, which was determined using a scanning hall-probe microscopy analysis. Improvement of the J e uniformity was also confirmed based on scribed tapes. A smaller dispersion of the filament-critical current values in the UTOC-MOD tape was determined based on a comparison with the results for obtained by a conventional process. With respect to the mechanical strength, it was established that the dispersion of the delamination strength, which was evaluated using stud-pull equipment, was suppressed. Microstructural analysis revealed that, the UTOC films were pore-free, although large pores are present in the films when conventional MOD is utilized. This difference in the microstructure can he attributed to the aforementioned improvement in the uniformity of the UTOC-MOD films.

リンク情報
DOI
https://doi.org/10.1109/TASC.2019.2908241
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000469951600001&DestApp=WOS_CPL
ID情報
  • DOI : 10.1109/TASC.2019.2908241
  • ISSN : 1051-8223
  • eISSN : 1558-2515
  • Web of Science ID : WOS:000469951600001

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