2003年7月
Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy
APPLIED PHYSICS LETTERS
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- 巻
- 83
- 号
- 2
- 開始ページ
- 296
- 終了ページ
- 298
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.1592310
- 出版者・発行元
- AMER INST PHYSICS
Strain depth profiles in HfO2 (3 nm)/Si(001) prepared by atomic-layer chemical vapor deposition have been measured using high-resolution Rutherford backscattering spectroscopy in combination with a channeling technique. It is found that the Si lattice is compressed in the vertical direction around the interface. The observed maximum strain is about 1% at the interface and the strained region extends down to similar to3 nm from the interface. (C) 2003 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.1592310
- ISSN : 0003-6951
- Web of Science ID : WOS:000184038900031