2006年8月
Observation of the interfacial layer in HfO2(10 nm)/Si by high-resolution RBS in combination with grazing angle sputtering
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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- 巻
- 249
- 号
- 開始ページ
- 238
- 終了ページ
- 241
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.nimb.2006.04.006
- 出版者・発行元
- ELSEVIER SCIENCE BV
A Si(001) wafer with a HfO2 layer of 10 nm thickness prepared by atomic layer CVD, is irradiated by 1 keV Xe+ ions at a grazing angle of 15 degrees. The sample is measured in situ using high-resolution Rutherford backscattering spectroscopy. With removing a part of HfO2 layer by the grazing angle sputtering, the observed trailing edge of Hf signal becomes sharper, indicating an improvement of the depth resolution at the HfO2/Si interface. After removal of a part of the HfO2 layer (similar to 7 nm), the effective depth resolution becomes more than two times better than that before sputtering and the existence of the SiOx interface layer is clearly seen. (c) 2006 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.nimb.2006.04.006
- ISSN : 0168-583X
- Web of Science ID : WOS:000239545000060