論文

査読有り
2006年8月

Observation of the interfacial layer in HfO2(10 nm)/Si by high-resolution RBS in combination with grazing angle sputtering

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • W. Sakai
  • ,
  • K. Nakajima
  • ,
  • M. Suzuki
  • ,
  • K. Kimura
  • ,
  • B. Brijs

249
開始ページ
238
終了ページ
241
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.nimb.2006.04.006
出版者・発行元
ELSEVIER SCIENCE BV

A Si(001) wafer with a HfO2 layer of 10 nm thickness prepared by atomic layer CVD, is irradiated by 1 keV Xe+ ions at a grazing angle of 15 degrees. The sample is measured in situ using high-resolution Rutherford backscattering spectroscopy. With removing a part of HfO2 layer by the grazing angle sputtering, the observed trailing edge of Hf signal becomes sharper, indicating an improvement of the depth resolution at the HfO2/Si interface. After removal of a part of the HfO2 layer (similar to 7 nm), the effective depth resolution becomes more than two times better than that before sputtering and the existence of the SiOx interface layer is clearly seen. (c) 2006 Elsevier B.V. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/j.nimb.2006.04.006
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000239545000060&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.nimb.2006.04.006
  • ISSN : 0168-583X
  • Web of Science ID : WOS:000239545000060

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