論文

査読有り
2014年5月

Photocatalytic Current Doubling-Induced Generation of Uniform Selenium and Cadmium Selenide Quantum Dots on Titanium(IV) Oxide

JOURNAL OF PHYSICAL CHEMISTRY C
  • Musashi Fujishima
  • ,
  • Kentaro Tanaka
  • ,
  • Naoki Sakami
  • ,
  • Masataka Wada
  • ,
  • Katsuyuki Morii
  • ,
  • Takanori Hattori
  • ,
  • Yasutaka Sumida
  • ,
  • Hiroaki Tada

118
17
開始ページ
8917
終了ページ
8924
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1021/jp410794j
出版者・発行元
AMER CHEMICAL SOC

We have developed a current doubling-induced two step photodeposition (CD-2PD) technique for forming selenium quantum dots (QIDs) and metal selenide QDs on TiO2, and proposed a reaction mechanism. Large aggregates of Se particles (similar to 100 nm) are generated on TiO2 from aqueous and 2-methyl-2-propanol solutions of H2SeO3 by UV-light irradiation. In contrast, highly dispersed selenium QDs are formed on TiO2 from the H2SeO3 ethanol and methanol solutions (Se/Ti02). The mean particle size increases with an increase in irradiation time (t(p1)) to reach 8.7 nm at t(p1),, = 2 h. The rates of Se photodeposition in the latter solvents are much faster than those in the latter solvents. These striking differences can be attributed to the current doubling effect of ethanol and methanol by photoelectrochemical measurements. Subsequent UV-light irradiation of Se(t(p1), = 20 min)/TiO2 in ethanol and methanol solutions containing Cd2+ ions converts the Se QDs into homogeneous CdSe QDs (similar to 2 nm). The application of this in situ CD-2PD technique to the mesoporous TiO2 nanocrystalline film enables the uniform incorporation of CdSe QDs into the film (CdSeimp-TiO2). QD-sensitized solar cells employing the CdSeimp-TiO2 photoanodes afford much higher power conversion efficiencies than that using a photoanode prepared in the aqueous solution.

リンク情報
DOI
https://doi.org/10.1021/jp410794j
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000335433100023&DestApp=WOS_CPL
ID情報
  • DOI : 10.1021/jp410794j
  • ISSN : 1932-7447
  • eISSN : 1932-7455
  • Web of Science ID : WOS:000335433100023

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