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Peer-reviewed Last author Corresponding author
May 21, 2019

Bis[1]benzothieno[5,4-d:5¤,4¤-d¤]benzo[1,2-b:4,5-b¤]dithiophene Derivatives: Synthesis and effect of sulfur positions on their transistor properties

Bulletin of the Chemical Society of Japan
  • Shuhei Nishinaga
  • ,
  • Masato Mitani
  • ,
  • Hiroki Mori
  • ,
  • Toshihiro Okamoto
  • ,
  • Jun Takeya
  • ,
  • Yasushi Nishihara

Volume
92
Number
6
First page
1107
Last page
1116
Language
English
Publishing type
Research paper (scientific journal)
DOI
10.1246/bcsj.20180358

© 2019 The Chemical Society of Japan. Bis[1]benzothieno[5,4-d:5¤,4¤-d¤]benzo[1,2-b:4,5-b¤]dithiophene (BBTBDT-2) and its phenyl-substituted derivative were successfully synthesized and characterized. From DFT calculations, highest occupied molecular orbitals (HOMOs) of both compounds are well delocalized and large orbital coefficients exist on sulfur atoms. Single-crystal X-ray analysis revealed that BBTBDT-2 derivatives formed herringbone structures in the solid state. In particular, BBTBDT-2 formed a layer-by-layer structure with effective 2D charge-carrier transporting capability. The fabricated OFETs based on BBTBDT-2 gave mobility up to 0.49 cm2 V11 s11 in the vacuum-deposited thin films, which is the highest value among BBTBDT derivatives including our previously reported syn-counterparts. We have also clarified a detailed structureproperty relationship of sulfur positions and phenyl substituents as indicated by theoretical calculation, GIWAXS, and AFM analyses.

Link information
DOI
https://doi.org/10.1246/bcsj.20180358
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000470885200011&DestApp=WOS_CPL
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85069512370&origin=inward
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ID information
  • DOI : 10.1246/bcsj.20180358
  • ISSN : 0009-2673
  • eISSN : 1348-0634
  • SCOPUS ID : 85069512370
  • Web of Science ID : WOS:000470885200011

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