Thi Van Anh Nguyen (Nguyen Thi Van Anh) - マイポータル

基本情報

所属: 東北大学省エネルギー・スピントロニクス集積化システムセンター助教
: Center for Innovative Integrated Electronics Systems Assistant Professor

J-GLOBAL ID: 201901017916980650
researchmap会員ID: B000352393

研究キーワード

研究分野

自然科学一般 / 磁性、超伝導、強相関系 / Spintronics, Oxide Electronics, High-frequency ferromagnetic resonance

経歴

2018年6月 - 現在

Tohoku University, Center for Science and Innovation in Spintronics, Assistant Professor
2015年10月 - 2018年3月

Osaka University, Graduate School of Engineering, Postdoc researcher
2006年1月 - 2015年9月

Hanoi National University of Education, Vietnam, Department of Physics, Lecturer

学歴

2012年4月 - 2015年9月

Osaka University, Graduate School of Engineering Science, PhD
2003年11月 - 2005年12月

Vietnam National University, Physics, Master
1999年9月 - 2003年6月

Vietnam National University, Physics, Undergraduate

受賞

2014年12月

Best Student Poster, Investigation of dc transport dynamics in strongly correlated (La,Pr,Ca)MnO3 film using an insulator-metal composite model for THz conductivity, 18th SANKEN International Symposium

Nguyen Thi Van Anh
2014年3月

Best Presentation, Conductive properties through the metal insulator transition in the strongly correlated (La,Pr,Ca)MnO3 film investigated by the THz Time Domain Spectroscopy, 4th International Symposium on Terahertz Nanoscience

Nguyen Thi Van Anh
2008年7月

Award for participation as a Coordinator in the 39th International Physics Olympiad (IPho), Ministry of Education and Training, Vietnam

Nguyen Thi Van Anh

論文

Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction

T. V. A. Nguyen, H. Naganuma, H. Honjo, S. Ikeda, T. Endoh

AIP Advances 14 025018-025018 2024年2月1日査読有り
Evaluation of the magnetization dynamics in various thick YIG films using our proposed measurement technique

Thi Van Anh Nguyen, Yasushi Endo

AIP Advances 12(3) 035234-035234 2022年3月1日査読有り
Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields

T. V. A. Nguyen, Y. Saito, H. Naganuma, S. Ikeda, T. Endoh, Y. Endo

AIP Advances 12(3) 035133-035133 2022年3月1日
Perpendicular Magnetic Tunnel Junctions with Four Anti-ferromagnetically Coupled Co/Pt Pinning Layers

H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, Y. Noguchi, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics 58(2) 4400105-1-4400105-6 2022年2月査読有り
Effect of Magnetic Coupling Between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions with MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer

K. Nishioka, S. Miura, H. Honjo, H. Naganuma, T. V. A. Nguyen, T. Watanabe, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics 58(2) 4400406-1-4400406-6 2022年2月査読有り
Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer

H. Honjo, H. Naganuma, K. Nishioka, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics 58(8) 1-1 2022年
Enhancement of magnetic coupling and magnetic anisotropy in MTJs with multiple CoFeB/MgO interfaces for high thermal stability

K. Nishioka, H. Honjo, H. Naganuma, T. V.A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

AIP Advances 11(2) 2021年2月1日
Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis

H. Honjo, H. Naganuma, T. V. A. Nguyen, H. Inoue, M. Yasuhira, S. Ikeda, T. Endoh

AIP Advances 11(2) 025211-025211 2021年2月1日
Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm

H. Naganuma, S. Miura, H. Honjo, K. Nishioka, T. Watanabe, T. Nasuno, H. Inoue, T. V.A. Nguyen, Y. Endo, Y. Noguchi …

Digest of Technical Papers - Symposium on VLSI Technology 2021-June 2021年
First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

K. Nishioka, S. Miura, H. Honjo, H. Inoue, T. Watanabe, T. Nasuno, H. Naganuma, T. V. A. Nguyen, Y. Noguchi, M. Yasuhira …

IEEE Transactions on Electron Devices 1-6 2021年
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10 ns Low Power Write Operation, 10 years Retention and Endurance > 10^11

VLSI Symposium 1-6 2020年6月査読有り
Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs With Double CoFeB/MgO Interface

H. Honjo, M. Niwa, K. Nishioka, T. V. A. Nguyen, H. Naganuma, Y. Endo, M. Yasuhira, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics 56(8) 1-4 2020年5月査読有り
Magnetic properties of Co film in Pt/Co/Cr2O3/Pt structure

T. V. A. Nguyen, Y. Shiratsuchi, H. Sato, S. Ikeda, T. Endoh, Y. Endo

AIP Advances 10(1) 015152-015152 2020年1月28日査読有り責任著者
First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400℃ thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology

International Electron Device Meeting 2019 28.5.1-28.5.4 2020年1月13日査読有り
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹

Sadahiko Miura, Koichi Nishioka, Hiroshi Naganuma, Nguyen T. V. A., Hiroaki Honjo, Shoji Ikeda, Toshinari Watanabe, Hirofumi Inoue, Masaaki Niwa, Takaho Tanigawa …

IEEE Transactions on Electron Devices 1-6 2020年査読有り
Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers

H. Honjo, T. V. A. Nguyen, M. Yasuhira, M. Niwa, S. Ikeda, H. Sato, T. Endoh

AIP Advances 9(12) 125330-125330 2019年12月26日査読有り
Insertion layer thickness dependence of Magnetic and Electrical properties for double CoFeB/MgO interface magnetic tunnel junction

S. Miura, T. V. A. Nguyen, Y. Endo, H. Sato, S. Ikeda, K. Nishioka, H. Honjo, T. Endoh

IEEE Trans. Mag. 2019年3月査読有り
Energy condition of isothermal magnetoelectric switching of perpendicular exchange bias in Pt/Co/Au/Cr <inf>2</inf> O <inf>3</inf> /Pt stacked film

Thi Van Anh Nguyen, Yu Shiratsuchi, Shogo Yonemura, Tatsuo Shibata, Ryoichi Nakatani

Journal of Applied Physics 124(23) 233902_1-233902_7 2018年12月21日査読有り
Antiferromagnetic domain wall creep driven by magnetoelectric effect

Yu Shiratsuchi, Hiroaki Yoshida, Yoshinori Kotani, Kentaro Toyoki, Thi Van Anh Nguyen, Tetsuya Nakamura, Ryoichi Nakatani

APL Materials 6(12) 121104_1-121104_9 2018年12月1日査読有り
Magnetoelectric control of antiferromagnetic domain of Cr2O3 thin film toward spintronics application

Y. Shiratsuchi, T. V. A. Nguyen, R. Nakatani

J. Magn. Soc. Jpn. 42(6) 119-126 2018年11月査読有り

もっとみる

MISC

電気磁気効果によるCo/Cr₂O₃界面の界面交換磁気異方性反転とダイナミクス (スピントロニクスにおける次世代材料開発)

白土優, Nguyen Thi Van Anh, 豊木研太郎, 中谷亮一

社団法人日本磁気学会研究会資料 = Bulletin of Topical Symposium of the Magnetics Society of Japan 208 39-44 2016年6月9日
Preparation and some properties of ZnS and ZnS:Mn nanostructured materials

T. V. A. Nguyen, N. M. Thuy, T. M. Thi, L. T, H. Hai, D. T. Sam

Advances in Optics, Photonics, Spectroscopy & Applications VI (ISSN 1859 - 4271) 378-385 2010年査読有り
Preparation and some properties of ZnS and ZnS:Cu, Al materials

T. V. A. Nguyen, N. M. Thuy, N. M. Nghia, D. T. Sam, N. T. Khoi

The fifth National Conference on Solid State Physics 520-523 2007年
Magnetometer based on Hall effect – an effective instrument in studying the magnetic properties of thin film

P. H. Quang, T. Q. Hung, T. V. A. Nguyen

The sixth National Conference on Physics 2005年
Some properties of magnetic semiconductor Al1-xMnxN thin films

P. H. Quang, T. V. A. Nguyen, T. Q. Hung

The sixth National Conference on Physics 2005年
Enhanced performance of TCO transparent conductive electrode for photo – electronic devices

P. V. Nho, P. A. Tuan, T. V. A. Nguyen, N. T. Hai, N. T, T. Hang, H. N. Thanh

The ninth Vietnam Conference on radio and electronics (Rev’04) 239-242 2004年
The Use of Ag nanosized particles for increasing electrical conductivity of SnO2:F electrode

P. A. Tuan, T. V. A. Nguyen, P. V. Nho, N. T, T. Hang

The second International Workshop on Nanophysics and Nanotechnology (IWONN’04) 209-212 2004年
Preparation of Sn – doped In2O3 and its interfacial properties with nanocrystalline TiO2

P. V. Nho, T. V. A. Nguyen, N. T. Hien, T. K. Cuong, D. T. Thu

The seventh Vietnamese – German Seminar on Physics and Engineering 270-273 2004年
Studying the interface between nanocrystalline TiO2 and SnO2

P. V. Nho, V. V. Thanh, N. Q. Tien, T. V. A. Nguyen

The fourth National Conference on Solid State Physics 309-312 2003年

担当経験のある科目(授業)

所属学協会

2020年9月 - 現在

日本磁気学会
2020年1月 - 現在

IEEE
2014年4月 - 現在

応用物理学会

産業財産権

特願2016-146726 薄膜構造体、磁気記憶素子、磁気記憶装置及び薄膜構造体の製造方法

Yu Shiratsuchi, Nguyen Thi Van Anh, Ryoichi Nakatani

Thi Van Anh Nguyen

基本情報

研究キーワード

研究分野

経歴

学歴

受賞

論文

MISC

担当経験のある科目(授業)

所属学協会

産業財産権

メニュー

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