2016年
Ion-Beam-Induced Luminescence Analysis of beta-SiAlON:Eu Scintillator under Focused Microbeam Irradiation
SENSORS AND MATERIALS
- 巻
- 28
- 号
- 8
- 開始ページ
- 837
- 終了ページ
- 844
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.18494/SAM.2016.1242
- 出版者・発行元
- MYU, SCIENTIFIC PUBLISHING DIVISION
The scintillation properties and radiation durability of beta-SiAlON:Eu were evaluated under focused microbeam irradiation conditions using 3 MeV protons. In situ observation of scintillation from beta-SiAlON:Eu was monitored using ion-beam-induced luminescence (IBIL) and compared with that from ZnS:Ag scintillators. A comparison of the spectra of IBIL from both scintillators shows that the intensity of IBIL was analogous at different peak wavelengths of 545 nm for P-beta-SiAlON:Eu and 450 nm for ZriS:Ag under the same irradiation conditions. Better radiation hardness towards focused proton microbeam irradiation was observed for the beta-SiAlON:Eu scintillator when continuous measurements by IBIL were used. A decay constant of approximately 1.11 x 10(16), which is two orders of magnitude higher than that for ZnS:Ag, was obtained for the beta-SiAlON:Eu scintillator for focused proton microbeam irradiation. IBIL was also capable of visualizing a previously damaged area of a ZnS:Ag scintillator, which corresponds to the focused beam scanning area of 100 x 100 mu m(2). Meanwhile, the irradiated region was not significantly distinguishable from the nonirradiated region on the beta-SiAlON:Eu scintillator under the same beam fluence. These results suggest that beta-SiAlON:Eu could be an ideal candidate scintillator for convenient ionized particle beam monitoring and a diagnostic tool for focused and intense beam fluence conditions up to 10(16) ions/cm(2).
- リンク情報
-
- DOI
- https://doi.org/10.18494/SAM.2016.1242
- J-GLOBAL
- https://jglobal.jst.go.jp/detail?JGLOBAL_ID=201602261794341030
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000383730000003&DestApp=WOS_CPL
- URL
- http://jglobal.jst.go.jp/public/201602261794341030
- ID情報
-
- DOI : 10.18494/SAM.2016.1242
- ISSN : 0914-4935
- J-Global ID : 201602261794341030
- Web of Science ID : WOS:000383730000003