2020年2月
A new photoreflectance signal possibly due to midgap interface states in buried F-doped SnO2/TiO2 junctions
JAPANESE JOURNAL OF APPLIED PHYSICS
- ,
- ,
- ,
- 巻
- 59
- 号
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/1347-4065/ab54f8
- 出版者・発行元
- IOP PUBLISHING LTD
A new optical anomaly has been found in photoreflectance spectra at temperatures above 250 K at spray-pyrolysis-deposited junctions composed of F-doped SnO2 and anatase TiO2 junctions. The energetic position of this anomaly at room temperature is considerably lower than those associated with the bulk optical transitions of TiO2. Its intensity monotonically grows against the temperature rise. These experimental facts suggest that the new anomaly comes from optical transition from the valence band of TiO2 to midgap interface states. (C) 2019 The Japan Society of Applied Physics
- リンク情報
- ID情報
-
- DOI : 10.7567/1347-4065/ab54f8
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000520006800034