2005年10月
A Si/CdTe semiconductor Compton camera
IEEE Transactions on Nuclear Science
- 巻
- 52
- 号
- 5 III
- 開始ページ
- 2045
- 終了ページ
- 2051
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/TNS.2005.856995
We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six layered double-sided Si Strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 122 keV to 662 keV. The energy resolution is 9.1 keV and 14 keV at 356 keV and 511 keV, respectively. © 2005 IEEE.
- リンク情報
- ID情報
-
- DOI : 10.1109/TNS.2005.856995
- ISSN : 0018-9499
- SCOPUS ID : 29144439813