2019年4月1日
Crystal growth of a MnS buffer layer for non-polar AIN on Si (100) deposited by radio frequency magnetron sputtering
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 58
- 号
- SB
- 記述言語
- 掲載種別
- 研究論文（学術雑誌）
- DOI
- 10.7567/1347-4065/aafd8e
- リンク情報
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- DOI
- https://doi.org/10.7567/1347-4065/aafd8e
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000464309900125&DestApp=WOS_CPL
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85065209140&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85065209140&origin=inward
- ID情報
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- DOI : 10.7567/1347-4065/aafd8e
- ISSN : 0021-4922
- eISSN : 1347-4065
- SCOPUS ID : 85065209140
- Web of Science ID : WOS:000464309900125