論文

査読有り
1997年8月

Li-7 NMR study of Li-doped polyacenic semiconductor (PAS) materials

SYNTHETIC METALS
  • H Ago
  • ,
  • K Tanaka
  • ,
  • T Yamabe
  • ,
  • K Takegoshi
  • ,
  • T Terao
  • ,
  • S Yata
  • ,
  • Y Hato
  • ,
  • N Ando

89
2
開始ページ
141
終了ページ
147
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/S0379-6779(98)80115-X
出版者・発行元
ELSEVIER SCIENCE SA LAUSANNE

The polyacenic semiconductor (PAS) material prepared from phenol resin at relatively low temperature (680 degrees C) can be doped by a much larger amount of lithium atoms up to the C2Li state compared with graphite (C6Li state). To understand the Li storage mechanism as well as the electronic structure, Li-7 nuclear magnetic resonance (NMR) measurements have been performed for the Li-doped PAS materials. In the initial doping stage a broad signal was observed at 0 ppm, while the successive doping causes a Knight shift to 9 ppm. It is suggested from this Knight shift that the Li nucleus slightly undergoes the Fermi contact interaction with conduction electrons delocalizing through carbon pi-atomic orbitals. From the spin-lattice relaxation rate (1/T)(1) it is found that the Li nucleus in the PAS material loses its mobility by the surrounding Li nuclei with the proceeding doping and that the Li nucleus is more loosely trapped than that in the C6Li state of graphite. (C) 1997 Elsevier Science S.A.

リンク情報
DOI
https://doi.org/10.1016/S0379-6779(98)80115-X
J-GLOBAL
https://jglobal.jst.go.jp/detail?JGLOBAL_ID=200902172164111390
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:A1997YA08600010&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/S0379-6779(98)80115-X
  • ISSN : 0379-6779
  • J-Global ID : 200902172164111390
  • Web of Science ID : WOS:A1997YA08600010

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