2007年
MD study of damage structures with poly-atomic boron cluster implantation
Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007
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- 開始ページ
- 23
- 終了ページ
- 24
- 記述言語
- 英語
- 掲載種別
- 研究発表ペーパー・要旨(国際会議)
- DOI
- 10.1109/IWJT.2007.4279937
The MD simulations of B monomer and small cluster implantation were performed. The non-linear effect for implant range was observed when the incident energy is as low as few hundreds eV/atom, where the B10 or B18 cluster implantation gives deeper implantation energy and so higher implant efficiency of dopants than that of B monomer or dimer. For damage formation, cluster implantation caused large number of collisions at narrow surface region, which results in high-density amorphization of impact area. This amorphization effect was observed at both low and high energy cluster ion implantation, and is expected to reduce enhanced diffusion and show good annihilation process. ©2007 IEEE.
- ID情報
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- DOI : 10.1109/IWJT.2007.4279937
- SCOPUS ID : 47649105158