2007年3月
Surface oxidation of Si assisted by irradiation with large gas cluster ion beam in an oxygen atmosphere
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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- 巻
- 256
- 号
- 1
- 開始ページ
- 350
- 終了ページ
- 353
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.nimb.2006.12.026
- 出版者・発行元
- ELSEVIER SCIENCE BV
Surface oxidation of Si assisted by Ar cluster impact with a current density of a few mu A/cm(2) under O(2) atmosphere was investigated. Thin-film formation by cluster ion beam presents a number of advantages such as atomic-scale surface smoothing, high density and precise stoichiometry. We used an Ar cluster ion beam with 20 keV and a mean size of 1000 atoms per cluster and measured the emission yields of Si(+) and SiO(+) after Ar cluster ion irradiation in O(2) atmosphere using a quadrupole mass spectrometer to investigate the dependence of Si surface oxidation on oxygen partial pressure. It was found that the Si surface was oxidized by Ar cluster ion irradiation in O(2) atmosphere. (c) 2006 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.nimb.2006.12.026
- ISSN : 0168-583X
- Web of Science ID : WOS:000245959300070