論文

査読有り
2007年3月

Surface oxidation of Si assisted by irradiation with large gas cluster ion beam in an oxygen atmosphere

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • K. Ichiki
  • ,
  • S. Ninomiya
  • ,
  • T. Seki
  • ,
  • T. Aoki
  • ,
  • J. Matsuo

256
1
開始ページ
350
終了ページ
353
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.nimb.2006.12.026
出版者・発行元
ELSEVIER SCIENCE BV

Surface oxidation of Si assisted by Ar cluster impact with a current density of a few mu A/cm(2) under O(2) atmosphere was investigated. Thin-film formation by cluster ion beam presents a number of advantages such as atomic-scale surface smoothing, high density and precise stoichiometry. We used an Ar cluster ion beam with 20 keV and a mean size of 1000 atoms per cluster and measured the emission yields of Si(+) and SiO(+) after Ar cluster ion irradiation in O(2) atmosphere using a quadrupole mass spectrometer to investigate the dependence of Si surface oxidation on oxygen partial pressure. It was found that the Si surface was oxidized by Ar cluster ion irradiation in O(2) atmosphere. (c) 2006 Elsevier B.V. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/j.nimb.2006.12.026
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000245959300070&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.nimb.2006.12.026
  • ISSN : 0168-583X
  • Web of Science ID : WOS:000245959300070

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