論文

査読有り
2015年3月

SOI-Based Schottky Barrier Diode Array for Ultraviolet Line-Scanner

IEEE SENSORS JOURNAL
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回数 : 49
  • You-Na Lee
  • ,
  • Jang-Kyoo Shin
  • ,
  • Young-Tae Lee
  • ,
  • Makoto Ishida
  • ,
  • Wanghoon Lee

15
3
開始ページ
1727
終了ページ
1731
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1109/JSEN.2014.2363872
出版者・発行元
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

This paper reports on fabrication and characterization of Schottky barrier diodes, which were obtained by Schottky contacts between aluminum electrodes and phosphorous-doped single crystalline silicon layer of silicon-on-insulator (SOI) structure. Our photodetectors (PDs) with this structure have advantages, which are simple fabrication process and compatible with complementary metal-oxide-semiconductor devices. The detector performed with the highest external quantum efficiency of 0.397 at 360 nm in ultraviolet spectral range and compared with other devices in previously reported papers. The light sensitivity of 116.2 mV/mW.cm(2) and stable response time of similar to 1.3 ms were achieved at 3 V applied voltage. In addition, operation of an SoI-based 1 x 6 PD array was demonstrated to verify the availability of ultraviolet line-scanner.

Web of Science ® 被引用回数 : 2

リンク情報
DOI
https://doi.org/10.1109/JSEN.2014.2363872
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000348858300017&DestApp=WOS_CPL

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