2015年3月
SOI-Based Schottky Barrier Diode Array for Ultraviolet Line-Scanner
IEEE SENSORS JOURNAL
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回数 : 146
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- 巻
- 15
- 号
- 3
- 開始ページ
- 1727
- 終了ページ
- 1731
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/JSEN.2014.2363872
- 出版者・発行元
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
This paper reports on fabrication and characterization of Schottky barrier diodes, which were obtained by Schottky contacts between aluminum electrodes and phosphorous-doped single crystalline silicon layer of silicon-on-insulator (SOI) structure. Our photodetectors (PDs) with this structure have advantages, which are simple fabrication process and compatible with complementary metal-oxide-semiconductor devices. The detector performed with the highest external quantum efficiency of 0.397 at 360 nm in ultraviolet spectral range and compared with other devices in previously reported papers. The light sensitivity of 116.2 mV/mW.cm(2) and stable response time of similar to 1.3 ms were achieved at 3 V applied voltage. In addition, operation of an SoI-based 1 x 6 PD array was demonstrated to verify the availability of ultraviolet line-scanner.
- リンク情報
- ID情報
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- DOI : 10.1109/JSEN.2014.2363872
- ISSN : 1530-437X
- eISSN : 1558-1748
- Web of Science ID : WOS:000348858300017