2019年5月7日
Observation of single optical site of Eu and Mg codoped GaN grown by NH<inf>3</inf>-source molecular beam epitaxy
Journal of Applied Physics
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- 巻
- 125
- 号
- 17
- 開始ページ
- 175702-1
- 終了ページ
- 175702-5
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.5090893
© 2019 Author(s). Eu-doped GaN (GaN:Eu) is a promising solid-state material for quantum information devices owing to its ideal quantum levels. However, a decrease of Eu concentration and the unification of optical sites are required for these devices to access an Eu ion. In this article, the effect of Eu concentration on the optical properties of Mg-codoped GaN:Eu was evaluated. The photoluminescence intensity from Eu ions increased linearly with increasing Eu concentration up to 1 × 1019cm-3, beyond which the intensity saturated. This resulted from the increase of the sharp luminescence line at 620.5 nm (site A), which has a large excitation cross section, with increasing Eu concentration in the range of low Eu concentrations; an excess Eu concentration leads to the formation of other types of optical sites with a low transfer efficiency or inactive sites. For a low Eu concentration of 3 × 1018cm-3, all optical sites except a specific optical site corresponding to site A disappeared, and the unification of optical sites was suggested. This result is expected to be valuable to realize quantum information devices.
- リンク情報
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- DOI
- https://doi.org/10.1063/1.5090893
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000467257200051&DestApp=WOS_CPL
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85065136482&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85065136482&origin=inward
- ID情報
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- DOI : 10.1063/1.5090893
- ISSN : 0021-8979
- eISSN : 1089-7550
- SCOPUS ID : 85065136482
- Web of Science ID : WOS:000467257200051