2006年12月
Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate
APPLIED PHYSICS LETTERS
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- 巻
- 89
- 号
- 23
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.2398924
- 出版者・発行元
- AMER INST PHYSICS
The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures. (c) 2006 American Institute of Physics.
- リンク情報
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- DOI
- https://doi.org/10.1063/1.2398924
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000242709200034&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33845433500&origin=inward
- ID情報
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- DOI : 10.1063/1.2398924
- ISSN : 0003-6951
- SCOPUS ID : 33845433500
- Web of Science ID : WOS:000242709200034