2011年8月22日
Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy
Japanese Journal of Applied Physics
- ,
- ,
- ,
- ,
- 巻
- 50
- 号
- 8S2
- 開始ページ
- 08KD03-1
- 終了ページ
- 08KD03-7
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JJAP.50.08KD03
- 出版者・発行元
- Japan Society of Applied Physics
We propose an advanced photoreflectance (PR) spectroscopy technique, for use as a method for the contactless analysis of plasma-induced damage (physical damage) on Si. Si wafers damaged by Ar plasma were placed on a measurement stage capable of sample cooling by liquid nitrogen. In comparison to the spectra at 300 K, the signal intensity at 90 K was increased by cooling. A spectral peak of a heavily-damaged sample was identified at 90 K, which was difficult at 300 K. Changes in the surface potential induced by plasma exposure (Delta V(s)) were calculated by analyzing the spectral parameters. Areal densities of trapped charges were estimated from Delta V(s). The temperature dependence of the PR spectra was discussed, and the primary cause of the increase in signal intensity was attributed to the reduced electron-phonon interactions in a lower temperature range. The proposed technique expands the applicable range of PR-based damage analysis. (C) 2011 The Japan Society of Applied Physics
Web of Science ® 被引用回数 : 9
Web of Science ® の 関連論文(Related Records®)ビュー
- リンク情報
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- DOI
- https://doi.org/10.1143/JJAP.50.08KD03
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000294340800013&DestApp=WOS_CPL
- 共同研究・競争的資金等の研究課題
- プラズマ曝露により半導体表面に誘起される欠陥を高精度で解析する分光測定技術の開発
- URL
- https://iopscience.iop.org/article/10.1143/JJAP.50.08KD03
- Scopus Url
- http://www.scopus.com/inward/record.url?eid=2-s2.0-80052013342&partnerID=MN8TOARS
- ID情報
-
- DOI : 10.1143/JJAP.50.08KD03
- ISSN : 0021-4922
- ORCIDのPut Code : 66152643
- SCOPUS ID : 80052013342
- Web of Science ID : WOS:000294340800013