論文

査読有り 筆頭著者 国際誌
2024年6月30日

NF₃ and F₂ gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy

Applied Surface Science
  • Asahiko Matsuda
  • ,
  • Takashi Teramoto
  • ,
  • Takahiro Nagata
  • ,
  • Dominic Gerlach
  • ,
  • Peng Shen
  • ,
  • Shigenori Ueda
  • ,
  • Takako Kimura
  • ,
  • Christian Dussarrat
  • ,
  • Toyohiro Chikyow

659
開始ページ
159941
終了ページ
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.apsusc.2024.159941, 10.2139/ssrn.4409130
出版者・発行元
Elsevier BV

The effects of NF3 or F2 gas annealing on epitaxially grown GaN and its interface with sputter-deposited Pt were investigated using hard X-ray photoelectron spectroscopy. Annealing GaN and Pt/GaN samples in an NF3 atmosphere led to the emergence of prominent F 1s peaks and chemically shifted Ga 2p peaks, indicating the efficient formation of Ga–Fx species not only in the bare GaN surface but also in the Pt/GaN interface, even when the NF3 treatment was performed after the Pt was deposited. By contrast, F2 annealing also led to the fluorination of the GaN surface and nonfluorination of the Pt/GaN interface. Although the plasma sputtering process removed F from the surface, band shifts were observed when the treatment conditions were varied. The findings in this study suggest that NF3 treatment is an effective post-processing method for fluorinating GaN-based systems before or after metal deposition.

リンク情報
DOI
https://doi.org/10.1016/j.apsusc.2024.159941
DOI
https://doi.org/10.2139/ssrn.4409130
ID情報
  • DOI : 10.1016/j.apsusc.2024.159941
  • DOI : 10.2139/ssrn.4409130
  • ISSN : 0169-4332
  • ORCIDのPut Code : 155752965

エクスポート
BibTeX RIS