Asahiko Matsuda

NF₃ and F₂ gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy

Asahiko Matsuda, Takashi Teramoto, Takahiro Nagata, Dominic Gerlach, Peng Shen, Shigenori Ueda, Takako Kimura, Christian Dussarrat, Toyohiro Chikyow

Applied Surface Science, 659 159941, Jun 30, 2024 Peer-reviewedLead author

Integration of X-ray absorption fine structure databases for data-driven materials science

Masashi Ishii, Kosuke Tanabe, Asahiko Matsuda, Hironori Ofuchi, Takahiro Matsumoto, Toyonari Yaji, Yasuhiro Inada, Hiroaki Nitani, Masao Kimura, Kiyotaka Asakura

Science and Technology of Advanced Materials: Methods, 3(1), Apr 17, 2023 Peer-reviewed

Ingesting materials research data into a data repository using RO-Crate

Kosuke Tanabe, Asahiko Matsuda

Joho Chishiki Gakkaishi, 31(4) 497-502, Dec 18, 2021

Data Architecture for IoT Data Collection System

Shigeyuki Matsunami, Asahiko Matsuda, Toyohiro Chikyow, Yoshitomo Harada, Hideki Yoshikawa

IPSJ Transactions on Digital Practice, 2(2) 80-89, Apr 15, 2021 Peer-reviewed

A development of Materials Data Repository for materials informatics

Kosuke Tanabe, Asahiko Matsuda

IPSJ SIG Technical Reports, 2020-IOT-51(9) 1-6, Sep 4, 2020

Raw-to-repository characterization data conversion for repeatable, replicable, and reproducible measurements

Mineharu Suzuki, Hiroko Nagao, Yoshitomo Harada, Hiroshi Shinotsuka, Katsumi Watanabe, Akito Sasaki, Asahiko Matsuda, Koji Kimoto, Hideki Yoshikawa

Journal of Vacuum Science & Technology A, 38(2) 023204-023204, Mar, 2020 Peer-reviewed

Wide band gap kesterite absorbers for thin film solar cells: Potential and challenges for their deployment in tandem devices

Vermang, B., Brammertz, G., Meuris, M., Schnabel, T., Ahlswede, E., Choubrac, L., Harel, S., Cardinaud, C., Arzel, L., Barreau, N. …

Sustainable Energy and Fuels, 3(9) 2246-2259, 2019 Peer-reviewed

Chemical Synthesis of Multilayered Nanostructured Perovskite Thin Films with Dielectric Features for Electric Capacitors

Zakaria, M.B., Nagata, T., Matsuda, A., Yasuhara, Y., Ogura, A., Hossain, M.S.A., Billah, M., Yamauchi, Y., Chikyow, T.

ACS Applied Nano Materials, 1(2) 915-921, 2018 Peer-reviewed

Modeling early breakdown failures of gate oxide in SiC power MOSFETs

Chbili, Z., Matsuda, A., Chbili, J., Ryan, J.T., Campbell, J.P., Lahbabi, M., Ioannou, D.E., Cheung, K.P.

IEEE Transactions on Electron Devices, 63(9) 3605-3613, 2016 Peer-reviewed

Interface-state capture cross section - Why does it vary so much?

Ryan, J.T., Matsuda, A., Campbell, J.P., Cheung, K.P.

Applied Physics Letters, 106(16) 163503, 2015 Peer-reviewed

Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate

Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono

Japanese Journal of Applied Physics, 53(3S2) 03DF01, Mar 5, 2014 Peer-reviewedLead author

Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors

Eriguchi, K., Matsuda, A., Takao, Y., Ono, K.

Japanese Journal of Applied Physics, 53(3S2), 2014 Peer-reviewed

Classical molecular dynamics simulations of plasma-induced physical damage : defect generation mechanisms in fin-type MOSFET

Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Kouichi Ono

IEICE Technical Report, 113(247) 37-40, Oct, 2013

A Study on Plasma Process-Induced Damage during Fabrication of Si Devices and Methodology for Optical Measurement

Asahiko Matsuda

Kyoto University, May, 2013 Peer-reviewedLead author

Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching

Yoshinori Nakakubo, Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono

IEICE Technical Report, 111(249) 73-78, Oct, 2011

Design Framework for Parameter Fluctuation in MOSFET Damaged by lon Bombardment during Plasma Etching

Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono

IEICE Technical Report, 111(249) 73-78, Oct, 2011 Invited

Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy

Matsuda, Asahiko, Nakakubo, Yoshinori, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

Japanese Journal of Applied Physics, 50(8S2) 08KD03-1-08KD03-7, Aug 22, 2011 Peer-reviewedLead author

Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

Fukasawa Masanaga, Nakakubo Yoshinori, Matsuda Asahiko, Takao Yoshinori, Eriguchi Koji, Ono Kouichi, Minami Masaki, Uesawa Fumikatsu, Tatsumi Tetsuya

Journal of Vacuum Science ＆ Technology A: Vacuum, Surfaces, and Films, 29(4) 41301-1-041301-7, Jun 23, 2011

Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology

Asahiko Matsuda

Japanese Journal of Applied Physics, 50(8S2) 08KD04-08KD04, 2011 Peer-reviewed

Structural and electrical characterization of HBr/O₂ plasma damage to Si substrate

Fukasawa, M., Nakakubo, Y., Matsuda, A., Takao, Y., Eriguchi, K., Ono, K., Minami, M., Uesawa, F., Tatsumi, T.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 29(4), 2011 Peer-reviewed

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