片山俊治 (Toshiharu Katayama) - マイポータル

基本情報

Effect of ultrathin top silicon layers on the X-ray photoelectron emission from the buried oxide in silicon-on-insulator wafers

Toshiharu Katayama, Hidekazu Yamamoto, Masahiko Ikeno, Yoji Mashiko, Satoru Kawazu, Masataka Umeno

Japanese Journal of Applied Physics, Part 2: Letters 38(9 A/B) L1058-L1061 1999年9月15日査読有り
Accurate thickness determination of both thin SiO<inf>2</inf> on Si and thin Si on SiO<inf>2</inf> by angle-resolved X-ray photoelectron spectroscopy

Toshiharu Katayama, Hidekazu Yamamoto, Masahiko Ikeno, Yoji Mashiko, Satoru Kawazu, Masataka Umeno

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38(7 B) 4172-4179 1999年7月15日査読有り
Elimination of X-ray photoelectron diffraction effect of Si(100) for accurate determination of SiO<inf>2</inf> overlayer thickness

Toshiharu Katayama, Hidekazu Yamamoto, Masahiko Ikeno, Yoji Mashiko, Satoru Kawazu, Masataka Umeno

Japanese Journal of Applied Physics, Part 2: Letters 38(7 A) L770-L773 1999年査読有り
Kikuchi-band analysis of X-ray photoelectron diffraction fine structure of Si(100) by precise angle-resolved X-ray photoelectron spectroscopy

Toshiharu Katayama, Hidekazu Yamamoto, Yoji Mashiko, Hiroshi Koyama, Satoru Kawazu, Masataka Umeno

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38(3 A) 1547-1552 1999年査読有り

Detection of gate oxide defects using electrochemical wet etching in KOH: H2O solution

N. Ohtani, T. Katayama, H. Yamamoto, H. Koyama

Proceedings of the 23rd International Symposium for Testing and Failure Analysis 1997年10月