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Field emission characteristics of BN nanofilms grown on GaN substrates: HT Luo, S Funakawa, WZ Shen, T Sugino

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 22(4) 1958-1963 2004年7月

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Boron carbon nitride film with low dielectric constant as passivation film for high speed electronic devices: S Umeda, T Yuki, T Sugiyama, T Sugino

DIAMOND AND RELATED MATERIALS 13(4-8) 1135-1138 2004年4月

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Electrical and optical characteristics of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition: T Yuki, S Umeda, T Sugino

DIAMOND AND RELATED MATERIALS 13(4-8) 1130-1134 2004年4月

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Field emission characteristics of boron nitride nanofilms deposited on substrate with various work functions: S Funakawa, Y Yamamuro, H Luo, T Sugino

DIAMOND AND RELATED MATERIALS 13(4-8) 994-998 2004年4月

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Electron field emission from boron nitride nanofilm and its application to graphite nanofiber: C Kimura, T Yamamoto, S Funakawa, M Hirakawa, H Murakami, T Sugino

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21(5) 2212-2216 2003年9月

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Enhanced field emission of boron nitride nanofilms on roughened GaN substrates: HT Luo, S Funakawa, WZ Shen, T Sugino

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42(8B) L996-L998 2003年8月

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Enhanced field emission of boron nitride nanofilms on roughened GaN substrates: HT Luo, S Funakawa, WZ Shen, T Sugino

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42(8B) L996-L998 2003年8月

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Tunneling controlled field emission of boron nitride nanofilm: T Sugino, C Kimura, T Yamamoto, S Funakawa

DIAMOND AND RELATED MATERIALS 12(3-7) 464-468 2003年3月

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Influence of the annealing process on properties of Cu/BCN/p-Si structure: SA Tomohiko, T Tai, A Okamoto, M Yoshitake, T Sugino

DIAMOND AND RELATED MATERIALS 12(3-7) 1113-1116 2003年3月

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Tunneling controlled field emission of boron nitride nanofilm: T Sugino, C Kimura, T Yamamoto, S Funakawa

DIAMOND AND RELATED MATERIALS 12(3-7) 464-468 2003年3月

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Influence of the annealing process on properties of Cu/BCN/p-Si structure: SA Tomohiko, T Tai, A Okamoto, M Yoshitake, T Sugino

DIAMOND AND RELATED MATERIALS 12(3-7) 1113-1116 2003年3月

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Field emission characteristics of GaN roughened with H-2 plasma: C Kimura, T Yamamoto, T Sugino

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21(1) 445-448 2003年1月

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Improved field-emission characteristics of GaN by BN coating: C Kimura, T Yamamoto, T Sugino

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21(1) 544-547 2003年1月

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Growth and characterization of boron carbon nitride films with low dielectric constant: Diamond and Related Materials 12, 1117-1121 2003年

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Field emission characteristics of GaN roughened with H-2 plasma: C Kimura, T Yamamoto, T Sugino

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21(1) 445-448 2003年1月

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Improved field-emission characteristics of GaN by BN coating: C Kimura, T Yamamoto, T Sugino

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21(1) 544-547 2003年1月

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Growth and characterization of boron carbon nitride films with low dielectric constant: Diamond and Related Materials 12, 1117-1121 2003年

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Electron field emission from boron-nitride nanofilms: T Sugino, C Kimura, T Yamamoto

APPLIED PHYSICS LETTERS 80(19) 3602-3604 2002年5月

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Field emission characteristics of carbon nanofiber improved by deposition of boron nitride nanocrystalline film: T Sugino, T Yamamoto, C Kimura, H Murakami, M Hirakawa

APPLIED PHYSICS LETTERS 80(20) 3808-3810 2002年5月

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Electron field emission from boron-nitride nanofilms: T Sugino, C Kimura, T Yamamoto

APPLIED PHYSICS LETTERS 80(19) 3602-3604 2002年5月

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Field emission characteristics of carbon nanofiber improved by deposition of boron nitride nanocrystalline film: T Sugino, T Yamamoto, C Kimura, H Murakami, M Hirakawa

APPLIED PHYSICS LETTERS 80(20) 3808-3810 2002年5月

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Characterization of AlInAs/InGaAs high electron mobility transistor wafers treated with remote phosphine plasma: K Yamamoto, N Fujita, S Nakajima, T Sugino

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(2B) 1043-1047 2002年2月

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Characterization of AlInAs/InGaAs high electron mobility transistor wafers treated with remote phosphine plasma: K Yamamoto, N Fujita, S Nakajima, T Sugino

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(2B) 1043-1047 2002年2月

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Dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical-vapor deposition: Takashi Sugino, Yoshihiro Etou, Tomoyoshi Tai, Hirotaro Mori

Applied Physics Letters 80(4) 649-651 2002年1月28日

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Dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical-vapor deposition: Takashi Sugino, Yoshihiro Etou, Tomoyoshi Tai, Hirotaro Mori

Applied Physics Letters 80(4) 649-651 2002年1月28日

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Characterization of boron-mitricle nanofilms: Appl. Phys. Lett. 80(19), 3602-3604 2002年

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Effect of annealing on dislectric constant of boron carbon mitride films synthesized by plasma-assisted chemical vopor deposition: Appl. Phys. Lett. 80(22), 4214-4216 2002年

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Characterization of boron-mitricle nanofilms: Appl. Phys. Lett. 80(19), 3602-3604 2002年

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Effect of annealing on dislectric constant of boron carbon mitride films synthesized by plasma-assisted chemical vopor deposition: Appl. Phys. Lett. 80(22), 4214-4216 2002年

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Oriented growth of diamond on (0001) surface of hexagonal GaN: M Oba, T Sugino

DIAMOND AND RELATED MATERIALS 10(3-7) 1343-1346 2001年3月

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Synthesis of boron nitride film with low dielectric constant for its application to silicon ultralarge scale integrated semiconductors: T Sugino, T Tai, Y Etou

DIAMOND AND RELATED MATERIALS 10(3-7) 1375-1379 2001年3月

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Study on electrical characteristics of metal/boron nitride/metal and boron nitride/silicon structures: C Kimura, T Yamamoto, T Sugino

DIAMOND AND RELATED MATERIALS 10(3-7) 1404-1407 2001年3月

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Formation of rough GaN surface by hydrogen plasma treatment and its application to field emitter: Jpn. J. Appl. Phys. 40(3B) L245-L248 2001年

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Study of UV and subgap photocurrent response in diamond and BCN thin films for detector applications: phys. stat. sol.(a) 185(1) 107-113 2001年

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Field of emission from GaN surfaces roughened by hydrogen plasma treatment: Appl. Phys. Lett. 78(21), 3229-3231 2001年

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Field emission Characteristics of BN/GaN structure: Appl. Phys. Lett. 79(27), 4533-4535 2001年

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Field of emission from GaN surfaces roughened by hydrogen plasma treatment: Appl. Phys. Lett. 78(21), 3229-3231 2001年

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Field emission Characteristics of BN/GaN structure: Appl. Phys. Lett. 79(27), 4533-4535 2001年

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Field emission characteristics of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition: T Sugino, H Hieda

DIAMOND AND RELATED MATERIALS 9(3-6) 1233-1237 2000年4月

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Field emission characteristics of boron nitride films: Takashi Sugino, Yoshihiro Etou, Shigeru Tagawa, Mikka Nishitani Gamo, Toshihiro Ando

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 18(2) 1089-1092 2000年3月

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Electron emission process of phosphorous-doped homoepitaxial diamond films: J. Vec. Sci. Technol. B 18(2) 1024-1026 2000年

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Dielectric constant of boron nitride films synthesized by plasma-assisted chemical vapor deposition: Takashi Sugino, Tomoyoshi Tai

Jpn. J. Appl. Phys. 39(11A) L1101-L1104 2000年

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Growth of((]G0003[))-oriented diamond grains on hexagonal GaN: Masato Oba, Takashi Sugino

Jpn. J. Appl. Phys. 39(12A) L1213-L1215 2000年

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Behavior of electron emission from phosphorus-doped epitaxial diamond films: C Kimura, S Koizumi, M Kamo, T Sugino

DIAMOND AND RELATED MATERIALS 8(2-5) 759-762 1999年3月

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Surface conditioning of chemical vapor deposited hexagonal boron nitride film for negative electron affinity: KP Loh, Sakaguchi, I, MN Gamo, S Tagawa, T Sugino, T Ando

APPLIED PHYSICS LETTERS 74(1) 28-30 1999年1月

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Behavior of elactron traps in phosphidized GaAs by nitragon plasma trsatment: Takashi Sugino, Satoshi Nozu, Koichiro Matsuda

Jpn. J. Appl. Phys. 38(1A/B) L17-L19 1999年

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