廣木 彰

Investigation of Threshold Voltage Definition for Nanosheet MOSFETs by Using Quantum Drift Diffusion Model 

IEEJ Transactions on Electronics, Information and Systems 144(2) 82-87 2024年2月1日  査読有り

Analysis of Quantum Confinement in Nanosheet FETs by Using a Quantum Drift Diffusion Model 

IEEJ Transactions on Electronics, Information and Systems 142(11) 1174-1179 2022年11月1日  査読有り

Examination of Quantum Potential Coefficient in Quantum Drift Diffusion Model 

IEEJ Transactions on Electronics, Information and Systems 140(11) 1176-1181 2020年11月1日  査読有り

Mobility Model Parameters of Strained Si by Using a Quantum Drift Diffusion Model 

IEEJ Transactions on Electronics, Information and Systems 140(11) 1171-1175 2020年11月1日  査読有り

Analysis of nonequilibrium phenomena on electric characteristics of advanced MOSFETs by using a quantum energy transport model 

ELECTRICAL ENGINEERING IN JAPAN 211(1-4) 33-39 2020年6月  査読有り

Analysis of saturation velocity and energy relaxation time of electrons in Si using full-band Monte Carlo simulation 

ELECTRICAL ENGINEERING IN JAPAN 211(1-4) 40-46 2020年6月  査読有り

An Efficient and Accurate Time Step Control Method for Power Device Transient Simulation Utilizing Dominant Time Constant Approximation 

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS 39(2) 451-463 2020年2月  査読有り

Analysis of electrical characteristics of advanced MOSFETs by using a quantum energy transport model 

IEEJ Transactions on Electronics, Information and Systems 139(3) 213-218 2019年  査読有り

Analysis of saturation velocity and energy relaxation time of electrons in Si using full-band monte carlo simulation 

IEEJ Transactions on Electronics, Information and Systems 139(11) 1254-1259 2019年  査読有り

Analysis of non-equilibrium phenomena on electric characteristics of advanced mosfets by using a quantum energy transport model 

IEEJ Transactions on Electronics, Information and Systems 139(11) 1248-1253 2019年  査読有り

A Robust Simulation Method for Breakdown with Voltage Boundary Condition Utilizing Negative Time Constant Information 

2019 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2019) 2019-September 33-36 2019年  査読有り

Angular dependence of nonparabolicity factor of silicon band structure 

2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 42-43 2017年  査読有り

Angular dependence of nonparabolicity factor of energy band structures 

2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017) 2017-September 221-224 2017年  査読有り

An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method 

2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017) 2017-September 37-40 2017年  査読有り

A simulation study of short channel effects with a QET model based on Fermi-Dirac statistics and nonparabolicity for high-mobility MOSFETs 

JOURNAL OF COMPUTATIONAL ELECTRONICS 15(1) 76-83 2016年3月  査読有り

Analysis of the inversion layer electron density distributions of Ta /Al<inf>2</inf>O<inf>3</inf> MOSFETs 

IEEJ Transactions on Electronics, Information and Systems 136(11) 1500-1505 2016年  査読有り

Effects of nonparabolic band structure on intrinsic carrier concentration in In0.53Ga0.47As 

2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 60-61 2016年  査読有り

Analysis of Inversion Layer Electron Density of InGaAs MOSFETs 

2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 64-65 2016年  査読有り

Evaluation of Initial Electron Distributions in Ensemble Monte Carlo Simulations 

2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 48-49 2016年  査読有り