西田章浩 (Akihiro Nishida) - マイポータル - researchmap

基本情報

所属: 北海道大学電子科学研究所

ORCID iD: https://orcid.org/0009-0004-2787-2009
J-GLOBAL ID: 202301003957553017
researchmap会員ID: R000058947

論文

5

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Cu Films Using Liquid Copper Precursor Bis(1-ethylmethylamino-2-propoxy)copper, Cu(emap)2

Akihiro Nishida, Atsushi Yamashita, Masaki Enzu, Atsushi Sakurai, Yasutaka Matsuo

ACS Omega 2026年5月11日
Area-selective atomic layer deposition of Al2O3 film on Cu and Si substrates using bulky Al precursor AlMe2(iPr-AMD)

Akihiro Nishida, Atsushi Yamashita, Takuya Takahashi, Masaki Enzu, Ryota Fukushima, Tomoharu Yoshino

Journal of Vacuum Science & Technology A 2025年9月1日
Atomic Layer Deposition of Hafnium–Zirconium-Oxide Films Using a Liquid Cocktail Precursor Containing Hf(dmap)4 and Zr(dmap)4 for Ferroelectric Devices

Akihiro Nishida, Tsukasa Katayama, Takashi Endo, Yasutaka Matsuo

ACS Applied Materials & Interfaces 2025年2月19日
Atomic Layer Deposition of HfO2 Films Using Tetrakis(1-(N,N-dimethylamino)-2-propoxy)hafnium [Hf(dmap)4] for Advanced Gate Dielectrics Applications

Akihiro Nishida, Tsukasa Katayama, Yasutaka Matsuo

ACS Applied Nano Materials 2023年9月15日
Atomic layer deposition of Y2O3 films using a novel liquid homoleptic yttrium precursor tris(sec-butylcyclopentadienyl)yttrium [Y(sBuCp)3] and water

Akihiro Nishida, Tsukasa Katayama, Yasutaka Matsuo

RSC Advances 13(39) 27255-27261 2023年