論文

査読有り
2019年

Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI<inf>3</inf> Thin Film

Journal of Electronic Materials
  • Ajay Kumar Baranwal
  • ,
  • Shrikant Saini
  • ,
  • Zhen Wang
  • ,
  • Kengo Hamada
  • ,
  • Daisuke Hirotani
  • ,
  • Kohei Nishimura
  • ,
  • Muhammad Akmal Kamarudin
  • ,
  • Gaurav Kapil
  • ,
  • Tomohide Yabuki
  • ,
  • Satoshi Iikubo
  • ,
  • Qing Shen
  • ,
  • Koji Miyazaki
  • ,
  • Shuzi Hayase

記述言語
掲載種別
研究論文(学術雑誌)
DOI
10.1007/s11664-019-07846-8

© 2019, The Minerals, Metals & Materials Society. Inorganic CsSnI3 based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI3 thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn4+ increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn4+ concentrations, we report a power factor of 145.10 μW m−1 K−2 , along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature.

リンク情報
DOI
https://doi.org/10.1007/s11664-019-07846-8
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85075917633&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85075917633&origin=inward
ID情報
  • DOI : 10.1007/s11664-019-07846-8
  • ISSN : 0361-5235
  • eISSN : 1543-186X
  • SCOPUS ID : 85075917633

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