2019年5月
Physical origin of excellent data retention over 10years at sub-μA operation in AgW-alloy ionic memory
2019 IEEE 11th International Memory Workshop, IMW 2019
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- 記述言語
- 掲載種別
- 研究論文（国際会議プロシーディングス）
- DOI
- 10.1109/IMW.2019.8739678
© 2019 IEEE. We clarify the physical origin of excellent performance and reliability in AgW-alloy ionic memory. AgW-alloy ionic memory shows low operation current in sub-μA range, good data retention and low operation voltage, which are desirable characteristics for high-density cross-point applications. Mechanisms of the improvements in AgW alloy devices compared to pure Ag and AgTi alloy devices are discussed based on first-principles calculations. We find that large cohesive energy of W is a key for improving data retention while keeping low operation voltage in AgW-alloy ionic memory.
- リンク情報
- ID情報
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- DOI : 10.1109/IMW.2019.8739678
- SCOPUS ID : 85068345433