論文

査読有り
2014年11月

Unique surface structure formations on a Ge-covered Si(110)-16 x 2 surface

JOURNAL OF CRYSTAL GROWTH
  • Yuta Yokoyama
  • ,
  • Yuki Uozumi
  • ,
  • Hidehito Asaoka

405
開始ページ
35
終了ページ
38
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.jcrysgro.2014.07.047
出版者・発行元
ELSEVIER SCIENCE BV

Si-Ge structures forming new shapes on a Si(110)-16 x 2 reconstructed surface were investigated via scanning tunneling microscopy. Pyramidal-shaped Si-Ge nanoislands lying along the < 1 1 1 > directions were formed on the striped structure at Ge coverage between 3 and 6 monolayers. However, when a single monolayer of Ge was deposited on the Si(110)-16 x 2 surface, single-domain of 16 x 2 striped structure disappeared, and a new double-domain striped structure was formed over the surface along directions that differed from the < 1 1 2 > directions. This structure represents a new Si-Ge striped structure that forms by the mixing of Ge and Si due to high temperature annealing. These results indicate that the surface structure changes specifically with trace amounts or Ge. (C) 2014 Elsevier B.V. All rights reserved,

リンク情報
DOI
https://doi.org/10.1016/j.jcrysgro.2014.07.047
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000341416200008&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.jcrysgro.2014.07.047
  • ISSN : 0022-0248
  • eISSN : 1873-5002
  • Web of Science ID : WOS:000341416200008

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