Nov, 2007 - Nov, 2010
QUANTAMONDE: QUANTum and Atomistic MOdeling NanoDEvices
ANR: French National Research Agency
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- Grant amount
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- (Total)
- 80,000,000 Japanese Yen
- (Direct funding)
- 80,000,000 Japanese Yen
- (Indirect funding)
- 0 Japanese Yen
- Grant type
- Competitive
This proposal focuses on the development of a new generation of quantum transport simulation tools tackling with atomic scale issues which become of paramount importance for understanding low dimensional semiconductor devices.
On the basis of a common Green’s function formalism, the complementary expertises of partners, ranging from state-of-the-art ab initio approach, to sophisticated tight-binding and effective mass models have been combined to develop multiscale 3D device simulation codes. It allowed an in-depth analysis of quantum transport properties and field effect transistor characteristics in realistic models of both top-down ultimate MOSFETs and bottom-up CVD-grown semiconductor nanowires.
On the basis of a common Green’s function formalism, the complementary expertises of partners, ranging from state-of-the-art ab initio approach, to sophisticated tight-binding and effective mass models have been combined to develop multiscale 3D device simulation codes. It allowed an in-depth analysis of quantum transport properties and field effect transistor characteristics in realistic models of both top-down ultimate MOSFETs and bottom-up CVD-grown semiconductor nanowires.
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