2016年2月
relaxation in a hole-doped transition-metal dichalcogenide monolayer and bilayer with crystal defects
PHYSICAL REVIEW B
- ,
- 巻
- 93
- 号
- 7
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevB.93.075415
- 出版者・発行元
- AMER PHYSICAL SOC
We study the electronic spin relaxation effect in the hole-doped monolayer and bilayer transition-metal dichalcogenide in the presence of the crystal defects. We consider realistic models of the lattice vacancy and actually estimate the spin relaxation rate using the multi-orbital tight-binding model. In the monolayer, the spin-relaxation time is found to be extremely long compared to the momentum relaxation time, and this is attributed to the fact that the spin hybridization in the band structure is suppressed by the mirror reflection symmetry. The bilayer TMD has a much shorter spin relaxation time in contrast, and this is attributed to stronger spin hybridization due to the absence of the mirror symmetry.
- リンク情報
- ID情報
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- DOI : 10.1103/PhysRevB.93.075415
- ISSN : 2469-9950
- eISSN : 2469-9969
- Web of Science ID : WOS:000369401000006